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BDX34BTU

Fairchild Semiconductor

BDX34BTU by Fairchild Semiconductor

Fairchild Semiconductor's BDX34BTU is a PNP Darlington transistor with 70W power dissipation, 80V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min DC current gain of 750 and operates up to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.

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Overview

Unlock the power of innovation with the BDX34BTU by Fairchild Semiconductor. This Power Bipolar Junction Transistor (BJT) offers exceptional quality and performance, making it the ideal choice for a wide range of switching applications. With a maximum power dissipation of 70W and a maximum collector current of 10A, this PNP Darlington transistor delivers reliable and efficient operation. Trust Fairchild Semiconductor's expertise in semiconductor technology to bring you a product that exceeds expectations. Upgrade your designs with the BDX34BTU and experience the benefits of superior performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material provides reliability and protection for the transistor in various environments.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs that require a PNP transistor.

Configuration: DARLINGTON

The Darlington configuration offers high current gain and excellent performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient and rapid switching operations.

Package Shape: RECTANGULAR

The rectangular shape of the package enables easy mounting and efficient use of space on a circuit board.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure and reliable connection for easy soldering and maintenance.

Maximum Power Dissipation (Abs): 70 W

With a high power dissipation capacity of 70W, this transistor can handle high-power applications without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure and stable mounting on a heatsink or chassis for optimal thermal performance.

Minimum DC Current Gain (hFE): 750

The high minimum DC current gain of 750 ensures consistent and reliable amplification in the transistor.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the transistor can withstand extreme temperatures.

Maximum Collector-Emitter Voltage: 80 V

With a high collector-emitter voltage rating of 80V, this transistor is suitable for applications requiring high voltage levels.

Transistor Element Material: SILICON

Made with silicon material, this transistor offers high performance and reliability for various applications.

Maximum Collector Current (IC): 10 A

The high collector current rating of 10A allows for handling heavy loads and high-power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable and corrosion-resistant connection for enhanced durability.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection in a circuit design.

Nominal Transition Frequency (fT): 3 MHz

With a nominal transition frequency of 3MHz, this transistor enables fast switching speeds for efficient operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDX34BTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDX34BTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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