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BDX34CG

Onsemi

BDX34CG by Onsemi

BDX34CG by Onsemi is a PNP Power BJT with 70W power dissipation, 10A collector current, and 150°C max operating temp. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor has a max collector-emitter voltage of 100V and min DC current gain of 750 hFE.

Median Price

$0.685

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,518 parts In-Stock

1+ parts

$0.490

100+ parts

$0.480

1k+ parts

$0.470

10k+ parts

-

3,518

$0.490

$0.480

$0.470

-

Farnell

UK . 248 parts In-Stock

1+ parts

$0.685

100+ parts

$0.366

1k+ parts

$0.293

10k+ parts

$0.246

248

$0.685

$0.366

$0.293

$0.246

Newark

USA . 75 parts In-Stock

1+ parts

$0.963

100+ parts

$0.494

1k+ parts

$0.341

10k+ parts

$0.332

75

$0.963

$0.494

$0.341

$0.332

Flip Electronics (Authorized)

USA . 2,647 parts In-Stock

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-

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2,647

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.335

100+ parts

-

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50

$0.335

-

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Digiode

USA . 2,093 parts In-Stock

1+ parts

$0.423

100+ parts

-

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2,093

$0.423

-

-

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TME

Poland . 303 parts In-Stock

1+ parts

$0.761

100+ parts

$0.432

1k+ parts

$0.376

10k+ parts

-

303

$0.761

$0.432

$0.376

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Vyrian

USA . 2,755 parts In-Stock

1+ parts

-

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2,755

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Flip Electronics

USA . 2,647 parts In-Stock

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2,647

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VNN

France . 2,203 parts In-Stock

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2,203

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ComSIT Distribution GmbH

Germany . 10 parts In-Stock

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10

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Distributors (Availability)

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Corohmni

South Africa . 84 parts In-Stock

1+ parts

$0.328

100+ parts

-

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84

$0.328

-

-

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Bastille Electronics

Australia . 1,000 parts In-Stock

1+ parts

$0.335

100+ parts

$0.318

1k+ parts

$0.302

10k+ parts

$0.298

1,000

$0.335

$0.318

$0.302

$0.298

Continental Prestige Electronics

USA . 5,574 parts In-Stock

1+ parts

$0.335

100+ parts

-

1k+ parts

-

10k+ parts

$0.328

5,574

$0.335

-

-

$0.328

Argo Parts USA

USA . 1,608 parts In-Stock

1+ parts

$0.335

100+ parts

-

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10k+ parts

$0.325

1,608

$0.335

-

-

$0.325

Semicontronic

India . 1,127 parts In-Stock

1+ parts

$0.378

100+ parts

$0.369

1k+ parts

$0.367

10k+ parts

-

1,127

$0.378

$0.369

$0.367

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Corphita

USA . 620 parts In-Stock

1+ parts

$0.400

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620

$0.400

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Aztec Data Supply Inc.

USA . 224 parts In-Stock

1+ parts

$0.601

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224

$0.601

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Ampacity Inc.

Singapore . 1,031 parts In-Stock

1+ parts

$0.820

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1,031

$0.820

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AZTECH Wire

Italy . 817 parts In-Stock

1+ parts

$14.570

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817

$14.570

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TANS Electronics

Latvia . 6,988 parts In-Stock

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6,988

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Perfect Parts

USA . 5,693 parts In-Stock

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5,693

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 2,753 parts In-Stock

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2,753

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Kulean Microsystems

USA . 2,509 parts In-Stock

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2,509

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SupplyDigital Components

Austria . 804 parts In-Stock

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804

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UHIMA Technologies

Türkiye . 321 parts In-Stock

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321

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Overview

Elevate your power switching capabilities with the BDX34CG by Onsemi. Designed with precision and reliability in mind, this PNP Darlington transistor offers a seamless integration into various applications. Onsemi's commitment to quality shines through in every aspect of this product, from its durable plastic/epoxy package body to its high DC current gain of 750. With a maximum collector-emitter voltage of 100V and a maximum power dissipation of 70W, the BDX34CG is the perfect choice for those seeking efficient and effective switching solutions. Experience the difference with Onsemi's BDX34CG - where performance meets peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, ideal for a variety of applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into existing circuit designs and compatibility with PNP devices.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration with built-in diode and resistor simplifies circuit design and reduces the need for additional components.

Transistor Application: SWITCHING

Designed for switching applications, ensuring efficient power control and operation.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and installation in various devices and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure connections and ease of soldering during installation.

Maximum Power Dissipation (Abs): 70 W

High maximum power dissipation capability of 70 W ensures the transistor can handle demanding power requirements.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers strong mechanical support and easy mounting in different applications.

Minimum DC Current Gain (hFE): 750

High minimum DC current gain of 750 improves the stability and amplification performance of the transistor.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows for reliable operation in harsh environments and high-temperature conditions.

Maximum Collector-Emitter Voltage: 100 V

Maximum collector-emitter voltage of 100 V ensures safe and efficient handling of voltage variations in the circuit.

Transistor Element Material: SILICON

Silicon material in the transistor element offers high reliability, low leakage, and consistent performance.

Maximum Collector Current (IC): 10 A

High maximum collector current of 10 A enables the transistor to handle large current flows with ease.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance for reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies the wiring and connection process, making installation easier.

Case Connection: COLLECTOR

Case connection at the collector terminal ensures efficient heat dissipation and improves the overall performance of the transistor.

Nominal Transition Frequency (fT): 3 MHz

High nominal transition frequency of 3 MHz allows for fast switching speeds and improved frequency response in the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDX34CG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDX34CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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