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BDX33CG

Onsemi

BDX33CG by Onsemi

BDX33CG by Onsemi is a NPN power BJT with 70W max power dissipation, ideal for switching applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 750 and can handle up to 10A collector current. With a max operating temperature of 150°C and VCE of 100V, this transistor is suitable for high-power electronic projects.

Median Price

$1.203

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 18 parts In-Stock

1+ parts

$0.638

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$0.638

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$0.638

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18

$0.638

$0.638

$0.638

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Farnell

UK . 72 parts In-Stock

1+ parts

$1.590

100+ parts

$0.601

1k+ parts

$0.464

10k+ parts

$0.455

72

$1.590

$0.601

$0.464

$0.455

Distrelec

Netherlands . 20 parts In-Stock

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$1.602

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20

$1.602

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DigiKey

USA . 362 parts In-Stock

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$1.850

100+ parts

$0.791

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$0.573

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$0.471

362

$1.850

$0.791

$0.573

$0.471

Mouser Electronics

USA . 213 parts In-Stock

1+ parts

$1.850

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$0.634

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$0.539

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213

$1.850

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$0.539

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Newark

USA . 1,212 parts In-Stock

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$2.050

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$0.837

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$0.742

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1,212

$2.050

$0.837

$0.742

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Element14

Singapore . 1,212 parts In-Stock

1+ parts

$2.690

100+ parts

$1.010

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$0.780

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$0.765

1,212

$2.690

$1.010

$0.780

$0.765

Avnet

USA . 1,650 parts In-Stock

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1,650

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Rochester

USA . 1,351 parts In-Stock

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$0.639

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$0.531

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$0.473

1,351

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$0.639

$0.531

$0.473

Chip1Stop

Japan . 1,300 parts In-Stock

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$0.816

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$0.528

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1,300

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$0.816

$0.528

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Verical

USA . 1,000 parts In-Stock

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$0.528

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Master Electronics

USA . 1,000 parts In-Stock

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$0.451

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$0.430

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$0.411

1,000

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$0.451

$0.430

$0.411

Arrow

USA . 300 parts In-Stock

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100+ parts

$0.713

1k+ parts

$0.542

10k+ parts

$0.501

300

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$0.713

$0.542

$0.501

Distributors (In-Stock)

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Digiode

USA . 2,100 parts In-Stock

1+ parts

$0.497

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$0.497

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Nova Conductors

Japan . 84 parts In-Stock

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$0.626

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84

$0.626

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TME

Poland . 95 parts In-Stock

1+ parts

$1.770

100+ parts

$0.624

1k+ parts

$0.553

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95

$1.770

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$0.553

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Chip Stock

USA . 5,835 parts In-Stock

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Bristol Electronics

USA . 1,576 parts In-Stock

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1,576

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Sensible Micro Corp

USA . 1,576 parts In-Stock

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1,576

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IBS Electronics

USA . 1,450 parts In-Stock

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$0.632

1k+ parts

$0.603

10k+ parts

$0.576

1,450

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$0.632

$0.603

$0.576

Flip Electronics

USA . 1,400 parts In-Stock

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VNN

France . 1,012 parts In-Stock

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NAC Semi

USA . 900 parts In-Stock

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$2.650

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$2.410

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900

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$2.650

$2.410

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Vyrian

USA . 713 parts In-Stock

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713

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ComSIT Distribution GmbH

Germany . 50 parts In-Stock

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ComSIT USA

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ACDS - Activité Composants Distribution Service

France . 46 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 559 parts In-Stock

1+ parts

$0.388

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559

$0.388

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Semicontronic

India . 478 parts In-Stock

1+ parts

$0.392

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$0.382

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$0.380

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478

$0.392

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Corohmni

South Africa . 349 parts In-Stock

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$0.448

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349

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Corphita

USA . 1,645 parts In-Stock

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$0.471

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Argo Parts USA

USA . 852 parts In-Stock

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$0.606

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$0.588

852

$0.606

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$0.588

Aranea Global

USA . 100 parts In-Stock

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$0.613

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$0.588

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100

$0.613

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$0.588

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Advanced Electronics

New Zealand . 18 parts In-Stock

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$0.638

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$0.638

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$0.638

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18

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Continental Prestige Electronics

USA . 2,489 parts In-Stock

1+ parts

$0.992

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$0.726

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$0.474

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2,489

$0.992

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Aztec Data Supply Inc.

USA . 2,320 parts In-Stock

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$1.660

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Perfect Parts

USA . 11,024 parts In-Stock

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Microchip USA

USA . 7,891 parts In-Stock

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Formix International (Excess)

India . 7,600 parts In-Stock

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SupplyDigital Components

Austria . 4,898 parts In-Stock

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TANS Electronics

Latvia . 2,879 parts In-Stock

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Kulean Microsystems

USA . 2,869 parts In-Stock

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Eastek

USA . 1,150 parts In-Stock

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UHIMA Technologies

Türkiye . 855 parts In-Stock

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855

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Problanco Electronics

Mexico . 102 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 46 parts In-Stock

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Overview

With the BDX33CG by Onsemi, you can trust in the quality and reliability of a leading manufacturer in power bipolar junction transistors. This NPN Darlington transistor with built-in diode and resistor is perfect for switching applications, offering a maximum collector-emitter voltage of 100V and a maximum collector current of 10A. Whether you're designing industrial equipment or automotive systems, this transistor delivers exceptional performance and efficiency. Upgrade your projects with the BDX33CG and experience the value and benefits it brings to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that can protect the internal components of the transistor, making it long-lasting and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are known for their fast operation and high efficiency.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain, while the built-in diode and resistor help in protecting the transistor from voltage spikes and ensuring stable operation.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can quickly turn on/off and handle high currents efficiently.

Terminal Form: THROUGH-HOLE

Easy to install and solder onto a circuit board, providing a secure connection for reliable operation.

Maximum Power Dissipation (Abs): 70 W

With a high maximum power dissipation, this transistor can handle high power loads without overheating or getting damaged.

Maximum Collector-Emitter Voltage: 100 V

Suitable for applications requiring high voltage switching, providing a safe margin for operation within its maximum voltage rating.

Maximum Collector Current (IC): 10 A

Capable of handling high current loads, making it ideal for applications that require switching large currents.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency allows for fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDX33CG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDX33CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-394-9502, 5961013949502

NIIN

013949502

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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