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ULN2003APWRG4

Texas Instruments

ULN2003APWRG4 by Texas Instruments

ULN2003APWRG4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. This surface-mount transistor in a small outline package is ideal for complex configurations requiring high reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 5,602 parts In-Stock

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Digiode

USA . 3,136 parts In-Stock

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Nova Conductors

Japan . 62 parts In-Stock

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Corohmni

South Africa . 999 parts In-Stock

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$0.586

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$0.586

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Parana Technologies

USA . 318 parts In-Stock

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$0.842

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$1.801

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318

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DigiPath Technology Company

USA . 1,147 parts In-Stock

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$0.927

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$0.853

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ChromeModa Solutions

Germany . 5,818 parts In-Stock

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$0.946

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$0.776

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IDEA Electronic Components Group

UK . 687 parts In-Stock

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$0.946

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$0.851

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.074

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$1.021

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$1.021

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$1.074

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AZTECH Wire

Italy . 819 parts In-Stock

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$8.505

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Ampacity Inc.

Singapore . 134 parts In-Stock

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$20.050

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One Stop Electronics

USA . 899 parts In-Stock

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Semicontronic

India . 774 parts In-Stock

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$46.849

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Argo Parts USA

USA . 4,724 parts In-Stock

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Microchip USA

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Corphita

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Bastille Electronics

Australia . 200 parts In-Stock

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Continental Prestige Electronics

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Overview

Elevate your power management solutions with the ULN2003APWRG4 by Texas Instruments. Known for their high-quality manufacturing standards, Texas Instruments delivers reliable Power Bipolar Junction Transistors that excel in switching applications. With a maximum collector-emitter voltage of 50V and a peak reflow temperature of 260°C, this complex configuration transistor offers superior performance and durability. Whether you're designing industrial automation systems or motor control circuits, the ULN2003APWRG4 provides the value, benefits, and advantages needed to meet your power management requirements with confidence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN bipolar junction transistors offer high amplification capabilities and are commonly used in switching applications.

Configuration: COMPLEX

The complex configuration allows for versatile use in a wide range of applications, providing flexibility to design engineers.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and efficiency in turning circuits on and off.

Surface Mount: YES

The surface mount capability makes this transistor easy to install and saves space on the circuit board.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can handle higher power applications without the risk of damage.

Maximum Collector Current (IC): 0.5 A

This transistor can handle a maximum collector current of 0.5A, making it suitable for low to medium power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ULN2003APWRG4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JEDEC-95 Code:

MO-153AB

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ULN2003APWRG4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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