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2N6055PBFREE

Central Semiconductor

2N6055PBFREE by Central Semiconductor

2N6055PBFREE by Central Semiconductor is a NPN Darlington BJT with max. collector-emitter voltage of 60V and max. collector current of 8A. It has a min DC current gain of 100, making it ideal for switching applications in various industries due to its high transition frequency of 4MHz and wide operating temperature range from -65°C to 200°C.

Median Price

$6.350

Lifecycle Status

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3

In-Stock Inventory

1k+

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Mouser Electronics

USA . 86 parts In-Stock

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$6.350

100+ parts

$4.780

1k+ parts

$4.660

10k+ parts

$4.430

86

$6.350

$4.780

$4.660

$4.430

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Nova Conductors

Japan . 79 parts In-Stock

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$4.833

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$4.833

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Vyrian

USA . 8,822 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$4.833

100+ parts

-

1k+ parts

$4.591

10k+ parts

$4.495

1,000

$4.833

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$4.591

$4.495

Continental Prestige Electronics

USA . 499 parts In-Stock

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$4.833

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$4.736

499

$4.833

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$4.736

AZTECH Wire

Italy . 607 parts In-Stock

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$16.131

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607

$16.131

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Microchip USA

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QUARKTWIN TECHNOLOGY LTD

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Argo Parts USA

USA . 861 parts In-Stock

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Overview

Power up your projects with the 2N6055PBFREE by Central Semiconductor, a high-quality NPN Darlington power bipolar junction transistor designed for switching applications. With a maximum collector-emitter voltage of 60V and a maximum collector current of 8A, this transistor offers reliable performance in a compact round package body. Whether you're working on industrial automation, motor control, or power management systems, the 2N6055PBFREE provides the value, benefits, and advantages you need to bring your designs to life. Trust Central Semiconductor for superior quality and performance that delivers every time.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides excellent thermal conductivity and durability, ensuring efficient heat dissipation and protection for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in general-purpose applications, making this product versatile for various switching purposes.

Configuration: DARLINGTON

The Darlington configuration offers high current gain and low saturation voltage, making this transistor ideal for applications that require high power efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast switching speeds and reliable performance in circuit control.

Package Shape: ROUND

The round package shape allows for easy mounting and installation, making it convenient for use in various electronic devices or circuits.

Terminal Form: PIN/PEG

The pin/peg terminal form ensures secure connections and ease of soldering, providing a reliable electrical connection in the circuit.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltages, making it suitable for applications that require voltage regulation or switching.

Maximum Collector Current (IC): 8 A

The high maximum collector current rating allows this transistor to handle high current loads, making it suitable for power switching applications.

Nominal Transition Frequency (fT): 4 MHz

With a high transition frequency, this transistor can operate at high frequencies, providing fast response times in switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6055PBFREE attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Central Semiconductor

Specs

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6055PBFREE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

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