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JAN2N3055

Microchip Technology

JAN2N3055 by Microchip Technology

JAN2N3055 by Microchip Tech is a NPN BJT transistor with max. collector-emitter voltage of 70V, max. collector current of 15A, and min. DC current gain of 20. It's used for switching applications in military standards like MIL-19500/407D, featuring a round package style with flange mount and tin lead terminal finish.

Median Price

$52.653

Lifecycle Status

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21

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1k+

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TEDSS.com

USA . 21 parts In-Stock

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Ace Electronics

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Nova Conductors

Japan . 500 parts In-Stock

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Freelance Electronics

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American Microsemiconductor Inc.

USA . 128 parts In-Stock

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Vyrian

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Speed Components Ltd

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Component Electronics Inc.

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Sinequanon

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Corel Iberica Componentes, S.L.

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Sunrise Surplus Inc.

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Mil-Aero Solutions, Inc.

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Defense Contract Solutions

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Inland Empire Components Inc.

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Resion

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First Choice Components Inc.

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Corohmni

South Africa . 188 parts In-Stock

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$0.772

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Aztec Data Supply Inc.

USA . 3,378 parts In-Stock

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$0.794

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$1.248

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Semicontronic

India . 1,009 parts In-Stock

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AZTECH Wire

Italy . 384 parts In-Stock

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Continental Prestige Electronics

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Bastille Electronics

Australia . 38 parts In-Stock

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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West Coast Incorporated

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Authorized Procurement Solutions

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Microchip USA

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Overview

Unleash the power of efficiency and reliability with the JAN2N3055 from Microchip Technology. As a leader in the industry, Microchip ensures top-notch quality and performance in all their products. The JAN2N3055 is a versatile Power Bipolar Junction Transistor (BJT) designed for switching applications, offering customers unparalleled value and benefits. With a maximum collector-emitter voltage of 70V and a maximum collector current of 15A, this NPN transistor is the perfect choice for your next project. Trust Microchip to deliver excellence every time.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body provides excellent thermal conductivity, helping to dissipate heat effectively during operation.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in switching applications, making this product suitable for a wide range of switching tasks.

Configuration: SINGLE

The single configuration simplifies the circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, this transistor is optimized for fast and efficient switching operations.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into different electronic systems.

Terminal Form: PIN/PEG

The pin/peg terminal form provides a secure and reliable connection for easy installation and maintenance.

No. of Terminals: 2

With only 2 terminals, this transistor is simple to use and connect in circuit designs.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers stability and ease of mounting in various electronic systems.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures a reliable amplification of current in the transistor.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can endure high temperatures without malfunctioning.

Maximum Collector-Emitter Voltage: 70 V

The high maximum collector-emitter voltage allows for greater voltage handling capabilities in various applications.

Transistor Element Material: SILICON

Silicon material in the transistor element ensures stability, efficiency, and low power consumption in operation.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15 A, this transistor can handle high current loads effectively.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and low contact resistance for reliable connections in circuits.

Terminal Position: BOTTOM

The bottom terminal position offers convenient access during installation and maintenance procedures.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies the circuit design and ensures a secure connection to the collector.

Reference Standard: MIL-19500/407D

Compliance with the MIL-19500/407D reference standard ensures high quality, reliability, and performance of this transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) JAN2N3055 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

70 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Qualified

Reference Standard:

MIL-19500/407D

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

JAN2N3055 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-199-6008, 5961001996008, 5961-00-147-7289, 5961001477289, 5961-01-091-1749, 5961010911749

NIIN

001996008, 001477289, 010911749

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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