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JAN2N3715

Microchip Technology

JAN2N3715 by Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 10 A;

Median Price

$13.200

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 4 parts In-Stock

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$11.327

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$11.327

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$11.327

$11.327

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Bristol Electronics

USA . 3 parts In-Stock

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$13.200

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$13.200

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American Microsemiconductor Inc.

USA . 66 parts In-Stock

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$89.360

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66

$89.360

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Vyrian

USA . 5,946 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Flip Electronics

USA . 160 parts In-Stock

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Digiode

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Electronic Expediters

USA . 53 parts In-Stock

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Sunrise Surplus Inc.

USA . 11 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 10 parts In-Stock

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Prism Electronics

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Electronics Depot

USA . 8 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Distributors (Availability)

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Parana Technologies

USA . 742 parts In-Stock

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$1.284

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$2.042

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742

$1.284

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DigiPath Technology Company

USA . 1,731 parts In-Stock

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$1.414

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$1.301

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ChromeModa Solutions

Germany . 3,899 parts In-Stock

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$1.443

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$1.183

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IDEA Electronic Components Group

UK . 531 parts In-Stock

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$1.443

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$1.299

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AZTECH Wire

Italy . 374 parts In-Stock

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$11.265

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One Stop Electronics

USA . 1,195 parts In-Stock

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$14.050

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Component Stockers USA

USA . 85 parts In-Stock

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$582.030

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QUARKTWIN TECHNOLOGY LTD

USA . 13,496 parts In-Stock

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Authorized Procurement Solutions

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Infinite Electronics LLP (Excess)

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Corphita

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Aranea Global

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West Coast Incorporated

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Perfect Parts

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A-Plus Industry Inc.

USA . 6 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) JAN2N3715 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Qualified

Reference Standard:

MIL

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

JAN2N3715 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-584-0455, 5961005840455, 5961-00-499-7251, 5961004997251

NIIN

005840455, 004997251

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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