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BCP53-16T1G

Onsemi

BCP53-16T1G by Onsemi

Onsemi's BCP53-16T1G is a PNP power BJT with 80V VCEO, 1.5A IC, and 100 hFE. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 50MHz. This small outline transistor has Gull Wing terminals in a rectangular package.

Median Price

$0.382

Lifecycle Status

Suppliers In-Stock

38

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1k+

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Newark

USA . 3 parts In-Stock

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$0.649

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$0.316

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$0.233

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$0.649

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Arrow

USA . 40 parts In-Stock

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$0.690

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$0.275

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$0.187

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40

$0.690

$0.275

$0.187

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Adafruit Industries

USA . 200 parts In-Stock

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$1.385

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$1.316

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$1.316

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$1.385

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$1.316

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Rochester

USA . 38,950 parts In-Stock

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$0.153

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$0.127

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$0.113

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$0.113

Chip1Stop

Japan . 1,080 parts In-Stock

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$0.146

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Element14

Singapore . 591 parts In-Stock

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Verical

USA . 33 parts In-Stock

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$0.249

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Farnell

UK . 29 parts In-Stock

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Digiode

USA . 884 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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Flip Electronics

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Chip Stock

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NAC Semi

USA . 87,000 parts In-Stock

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Vyrian

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IBS Electronics

USA . 34,000 parts In-Stock

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Component Sense

UK . 8,161 parts In-Stock

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Diverse Electronics

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Cogito LLC

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LIBRA Elektronik GmbH

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J2 Sourcing AB

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Schukat

Germany . 1,000 parts In-Stock

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Partservice

France . 800 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 800 parts In-Stock

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Martec Srl

Italy . 664 parts In-Stock

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Florida Circuit

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Contempo Components LLC

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Connector Distribution Corp

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Semicontronic

India . 207,366 parts In-Stock

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Ampacity Inc.

Singapore . 59,863 parts In-Stock

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Corphita

USA . 399 parts In-Stock

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Corohmni

South Africa . 117 parts In-Stock

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Argo Parts USA

USA . 2,524 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.114

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$0.109

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Continental Prestige Electronics

USA . 11,948 parts In-Stock

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$0.370

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$0.154

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$0.062

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Aztec Data Supply Inc.

USA . 188 parts In-Stock

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$1.044

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Advanced Electronics

New Zealand . 200 parts In-Stock

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Perfect Parts

USA . 762,077 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 156,000 parts In-Stock

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Eastek

USA . 51,000 parts In-Stock

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Lixinc

USA . 15,732 parts In-Stock

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Component Stockers USA

USA . 12,211 parts In-Stock

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Kepictronics

USA . 9,999 parts In-Stock

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Kulean Microsystems

USA . 7,945 parts In-Stock

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Latvia . 7,485 parts In-Stock

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Spain . 5,020 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Problanco Electronics

Mexico . 3,223 parts In-Stock

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Germany . 2,880 parts In-Stock

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Alle Elektronik GmbH

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SupplyDigital Components

Austria . 1,001 parts In-Stock

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UHIMA Technologies

Türkiye . 899 parts In-Stock

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Brazil . 500 parts In-Stock

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UK . 337 parts In-Stock

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Overview

Enhance your electronic designs with the BCP53-16T1G Power Bipolar Junction Transistor by Onsemi. Crafted with precision and quality in mind, this PNP transistor is perfect for amplifier applications. With a maximum collector-emitter voltage of 80V and a minimum DC current gain of 100, this transistor offers reliable performance in a compact package. Trust in Onsemi's expertise to deliver high-quality components for your projects. Experience superior functionality and efficiency with the BCP53-16T1G - the perfect choice for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and cost-effective.

Polarity or Channel Type: PNP

The PNP polarity or channel type allows for efficient current flow in the desired direction, enhancing performance.

Configuration: SINGLE

The single configuration simplifies installation and reduces the chances of error in circuit design.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring high-quality signal amplification.

Surface Mount: YES

Being surface mountable, this product is easy to integrate on circuit boards, saving space and simplifying assembly.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy handling and placement on circuit boards.

Terminal Form: GULL WING

The gull wing terminal form provides secure connection points for improved reliability in circuitry.

No. of Terminals: 4

With 4 terminals, this product offers flexibility in circuit connections and ensures compatibility with various setups.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this transistor suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 100

The high minimum DC current gain ensures stable and consistent performance in amplification tasks.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand demanding operational conditions.

Maximum Collector-Emitter Voltage: 80 V

The maximum collector-emitter voltage rating ensures safe operation within specified voltage levels.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides reliability and durability for long-term use.

Minimum Operating Temperature: -65 °C

With a low minimum operating temperature, this product is suitable for use in a wide range of environments.

Maximum Collector Current (IC): 1.5 A

The high maximum collector current capacity allows for efficient power handling and operation.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides corrosion resistance and aids in solderability for secure connections.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit board layout and connection options.

Case Connection: COLLECTOR

The case connection at the collector terminal helps in heat dissipation, ensuring optimal performance.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature ensures proper soldering and reliability during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for reliable soldering during the assembly process.

Nominal Transition Frequency (fT): 50 MHz

With a high nominal transition frequency, this transistor can handle rapid signal switching and high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP53-16T1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCP53-16T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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