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SBCP68T1G

Onsemi

SBCP68T1G by Onsemi

SBCP68T1G by Onsemi is a NPN BJT transistor with VCEsat of 0.5V, hFE of 60, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and small outline package style. Operating temperature range from -65 to 150°C makes it suitable for various environments.

Median Price

$0.218

Lifecycle Status

Suppliers In-Stock

19

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1k+

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Arrow

USA . 295 parts In-Stock

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$0.218

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$0.150

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Rochester

USA . 3,000 parts In-Stock

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$0.420

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$0.420

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Farnell

UK . 4,452 parts In-Stock

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Chip1Stop

Japan . 5,000 parts In-Stock

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Verical

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Distributors (In-Stock)

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Digiode

USA . 314 parts In-Stock

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Nova Conductors

Japan . 51 parts In-Stock

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Chip Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Sensible Micro Corp

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Vyrian

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DigiKey Marketplace

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ACDS - Activité Composants Distribution Service

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Flip Electronics

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NAC Semi

USA . 1,000 parts In-Stock

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J2 Sourcing AB

Sweden . 632 parts In-Stock

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Cyclops Electronics Ltd

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Ampacity Inc.

Singapore . 13,177 parts In-Stock

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$0.116

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Semicontronic

India . 12,897 parts In-Stock

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Corohmni

South Africa . 71 parts In-Stock

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Corphita

USA . 1,578 parts In-Stock

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Component Stockers USA

USA . 4,325 parts In-Stock

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$0.550

4,325

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$0.550

Aranea Global

USA . 500 parts In-Stock

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$0.264

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$0.254

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Continental Prestige Electronics

USA . 2,313 parts In-Stock

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Argo Parts USA

USA . 1,439 parts In-Stock

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Aztec Data Supply Inc.

USA . 98 parts In-Stock

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AZTECH Wire

Italy . 889 parts In-Stock

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Perfect Parts

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Lixinc

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Problanco Electronics

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Kulean Microsystems

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Infinite Electronics LLP (Excess)

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Eastek

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GreenTree Electronics

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SupplyDigital Components

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UHIMA Technologies

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TANS Electronics

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Overview

Upgrade your power systems with the SBCP68T1G from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJTs) for all your switching needs. The SBCP68T1G offers a maximum VCEsat of 0.5V and a minimum DC current gain (hFE) of 60, ensuring efficient performance at all times. With a maximum collector-emitter voltage of 20V and a maximum collector current (IC) of 1A, this NPN transistor is perfect for various applications. Trust Onsemi to provide reliable products that guarantee high value and exceptional benefits for your projects. Choose the SBCP68T1G and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for versatile switching applications, making this transistor suitable for a wide range of electronics projects.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making this transistor easy to work with for both professionals and hobbyists.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient and seamless operation in electronic circuits that require on/off control.

Surface Mount: YES

The surface mount capability enables easy integration onto circuit boards, saving space and reducing assembly time for electronic devices.

Maximum VCEsat: 0.5 V

With a low maximum VCEsat of 0.5 V, this transistor helps minimize power loss and heat generation, leading to improved energy efficiency.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact footprint, making it ideal for use in tight spaces or on crowded circuit boards.

Terminal Form: GULL WING

The gull wing terminal form offers secure connections and easy soldering, ensuring reliable performance in various applications.

No. of Terminals: 4

With four terminals, this transistor provides flexibility in circuit design and enables connections to multiple components or subsystems.

Maximum Power Dissipation (Abs): 1.5 W

The high maximum power dissipation of 1.5 W allows the transistor to handle large loads and operate efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers space-saving benefits and allows for high packing density, making this transistor suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 60

With a minimum DC current gain of 60, this transistor ensures consistent and reliable amplification of input signals in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliable performance even in demanding environments or applications with elevated temperatures.

Maximum Collector-Emitter Voltage: 20 V

With a maximum collector-emitter voltage of 20 V, this transistor can handle high voltage levels safely and efficiently.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high reliability, performance, and durability, making it a trusted choice for electronics projects.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C allows this transistor to function reliably in extreme cold conditions or refrigerated environments.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle high current loads and deliver reliable performance in various electronic circuits.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability and durability in various applications.

Terminal Position: DUAL

The dual terminal position offers flexibility and ease of connection, allowing for versatile use in different circuit configurations.

Case Connection: COLLECTOR

The case connection at the collector terminal provides secure grounding and optimal thermal management, enhancing the overall performance and reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reflow processes, resulting in reliable connections and performance.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for robust solder joints and ensures the integrity of the connections in various assembly processes.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard, this transistor meets stringent automotive industry requirements for quality, reliability, and performance.

Nominal Transition Frequency (fT): 60 MHz

With a nominal transition frequency of 60 MHz, this transistor offers fast switching speeds and high-frequency capabilities, making it suitable for high-performance applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SBCP68T1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-261

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

SBCP68T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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