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SBCP53T1G

Onsemi

SBCP53T1G by Onsemi

SBCP53T1G by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 1.5A. It is commonly used as an amplifier in various applications due to its small outline package style and high transition frequency of 50MHz.

Median Price

$0.330

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 197 parts In-Stock

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$0.330

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$0.077

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197

$0.330

$0.077

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Farnell

UK . 13,079 parts In-Stock

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$0.347

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$0.152

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$0.149

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$0.347

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$0.149

Chip1Stop

Japan . 8,000 parts In-Stock

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$0.148

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$0.131

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$0.148

$0.131

Element14

Singapore . 3,421 parts In-Stock

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$0.427

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$0.290

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$0.284

3,421

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$0.427

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$0.284

Verical

USA . 197 parts In-Stock

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$0.077

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197

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$0.077

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Digiode

USA . 1,894 parts In-Stock

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$0.033

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$0.033

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Nova Conductors

Japan . 25 parts In-Stock

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$0.130

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$0.130

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Bristol Electronics

USA . 135 parts In-Stock

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$0.450

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$0.225

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135

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$0.225

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TME

Poland . 129 parts In-Stock

1+ parts

$0.690

100+ parts

$0.304

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$0.185

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$0.164

129

$0.690

$0.304

$0.185

$0.164

Flip Electronics

USA . 69,999 parts In-Stock

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Chip Stock

USA . 34,000 parts In-Stock

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Vyrian

USA . 8,031 parts In-Stock

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Rapid Electronics

USA . 925 parts In-Stock

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$0.160

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$0.160

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Microfarads

USA . 128 parts In-Stock

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128

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Ampacity Inc.

Singapore . 8,082 parts In-Stock

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$0.030

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$0.030

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Corphita

USA . 2,323 parts In-Stock

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$0.032

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$0.032

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Corohmni

South Africa . 136 parts In-Stock

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$0.035

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136

$0.035

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Netroflash

USA . 2,000 parts In-Stock

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$0.130

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$0.124

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$0.121

2,000

$0.130

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$0.121

Perfect Parts

USA . 1,197,666 parts In-Stock

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GreenTree Electronics

Israel . 422,385 parts In-Stock

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Continental Prestige Electronics

USA . 15,686 parts In-Stock

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$0.148

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Eastek

USA . 13,000 parts In-Stock

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Assy Fe

Spain . 11,200 parts In-Stock

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Futuretech Components

Singapore . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 4,764 parts In-Stock

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TANS Electronics

Latvia . 4,442 parts In-Stock

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Problanco Electronics

Mexico . 2,794 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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Formix International (Excess)

India . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 871 parts In-Stock

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Kulean Microsystems

USA . 123 parts In-Stock

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Overview

Upgrade your amplification game with the SBCP53T1G by Onsemi. Known for their exceptional quality and reliability, Onsemi is a trusted manufacturer of power bipolar junction transistors (BJT). This PNP transistor offers customers incredible value and benefits. With its small outline package shape and gull-wing terminals, it is perfect for surface mount applications. Delivering a maximum collector-emitter voltage of 80V and a maximum collector current of 1.5A, this transistor ensures powerful and efficient performance. Whether you're designing audio amplifiers or other electronic circuits, the SBCP53T1G is the ideal choice for reliable and high-quality amplification.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various amplifier applications.

Maximum Power Dissipation (Abs): 1.5 W

High maximum power dissipation allows the transistor to handle large currents and voltages without overheating, ensuring stable performance.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating allows the transistor to be used in applications with higher voltage requirements, increasing its versatility.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency indicates high-speed performance, making this transistor suitable for applications where high-frequency signals need to be amplified.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SBCP53T1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SBCP53T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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