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TTA004B,Q

Toshiba

TTA004B,Q by Toshiba

TTA004B,Q by Toshiba is a PNP BJT transistor with 160V VCE, 0.5V VCEsat, and 1.5A IC. Ideal for amplifier applications, it has a max power dissipation of 10W and hFE of 140. With a package style of FLANGE MOUNT and operating temp up to 150°C, it offers high performance in through-hole configuration.

Median Price

$0.320

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1k+

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Avnet

USA . 17,930 parts In-Stock

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$0.486

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$0.456

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TTI

USA . 1,250 parts In-Stock

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$0.155

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$0.155

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Nova Conductors

Japan . 300 parts In-Stock

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$0.175

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Vyrian

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Ampacity Inc.

Singapore . 8,153 parts In-Stock

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$0.100

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Netroflash

USA . 500 parts In-Stock

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$0.175

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$0.172

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$0.167

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$0.163

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$0.175

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$0.163

Advanced Electronics

New Zealand . 38 parts In-Stock

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$0.573

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$0.573

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$0.573

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38

$0.573

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Corohmni

South Africa . 13 parts In-Stock

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$1.841

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Unlock the power of superior quality with the TTA004B,Q by Toshiba. As a leading manufacturer in the industry, Toshiba delivers top-notch Power Bipolar Junction Transistors that guarantee high performance and reliability. Ideal for amplifier applications, this PNP transistor boasts a low VCEsat of 0.5V and a maximum collector-emitter voltage of 160V. With a compact rectangular package style and through-hole terminals, the TTA004B,Q offers ease of use and efficient heat dissipation. Experience the benefits of this transistor's 10W maximum power dissipation and 140 minimum DC current gain, providing customers with exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and reliability for the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits and this product is suitable for amplifier applications.

Configuration: SINGLE

Single configuration makes it easy to use in various circuit designs.

Maximum VCEsat: 0.5 V

Low VCEsat ensures minimal power loss in the amplifier circuit.

No. of Terminals: 3

3 terminals provide easy connectivity in circuits.

Maximum Power Dissipation (Abs): 10 W

High power dissipation capability allows for handling higher power loads.

Maximum Collector-Emitter Voltage: 160 V

High voltage rating ensures the transistor can handle higher voltages in the circuit.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and efficiency.

Nominal Transition Frequency (fT): 100 MHz

Higher transition frequency allows for faster switching speeds in the amplifier circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TTA004B,Q attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

17 pF

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

TTA004B,Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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