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ULN2804APG

Toshiba

ULN2804APG by Toshiba

Toshiba's ULN2804APG is an 8-bank NPN Darlington transistor array with built-in diode and resistor, ideal for switching applications. Featuring a min DC current gain of 1000x, it can handle up to 0.5A collector current at 50V collector-emitter voltage. This through-hole package with 18 terminals is made of silicon material in a rectangular shape.

Median Price

$8.559

Lifecycle Status

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Nova Conductors

Japan . 50 parts In-Stock

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$0.266

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EXC GmbH

Germany . 14 parts In-Stock

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$16.851

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Vyrian

USA . 1,559 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Goldney Electronics S.L.

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ACDS - Activité Composants Distribution Service

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LIBRA Elektronik GmbH

Germany . 40 parts In-Stock

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GES GmbH

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Whistler Technology

UK . 10 parts In-Stock

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LWI Electronics Inc

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PC Components Company LLC

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Bristol Electronics

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Continental Prestige Electronics

USA . 3,088 parts In-Stock

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$0.266

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$0.261

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Argo Parts USA

USA . 1,441 parts In-Stock

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$0.266

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$0.258

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.822

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$0.781

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$0.781

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Corohmni

South Africa . 405 parts In-Stock

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$1.498

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Aztec Data Supply Inc.

USA . 4,849 parts In-Stock

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AZTECH Wire

Italy . 494 parts In-Stock

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Semicontronic

India . 408 parts In-Stock

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$15.050

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$14.674

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$14.598

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Ampacity Inc.

Singapore . 1,304 parts In-Stock

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$27.050

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Overview

Enhance your projects with the reliable ULN2804APG by Toshiba, a top-quality product that guarantees performance and durability. As a trusted manufacturer, Toshiba ensures that their Power Bipolar Junction Transistors meet the highest standards in the industry. With its 8 banks, Darlington configuration, built-in diode, and resistor, this transistor is perfect for switching applications. Experience the value of seamless functionality and efficiency with the ULN2804APG, offering maximum collector-emitter voltage of 50 V and a minimum DC current gain of 1000. Upgrade your designs with this versatile and high-performance component today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer fast switching speeds and high amplification capabilities.

Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor simplifies circuit design and saves space, making it convenient for applications requiring multiple transistors.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient control of current flow in electronic circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to PCBs or breadboards.

Minimum DC Current Gain (hFE): 1000

A high hFE value ensures amplification of input signal with minimal distortion, making the transistor ideal for precision applications.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage rating of 50V, this transistor can handle a wide range of voltage fluctuations, enhancing its versatility.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material that offers reliable performance and high efficiency in electronic components.

Maximum Collector Current (IC): 0.5 A

Capable of handling up to 0.5A of collector current, this transistor is suitable for low to medium power applications.

Terminal Position: DUAL

Dual terminal position allows for flexible and convenient installation in various circuit configurations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ULN2804APG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDIP-T18

No. of Elements:

8

No. of Terminals:

18

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ULN2804APG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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