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TTA008B,Q(S

Toshiba

TTA008B,Q(S by Toshiba

TTA008B,Q(S by Toshiba is a PNP BJT transistor with 80V VCE, 2A IC, and 100MHz fT. Ideal for switching applications, it has a hFE of 60 and comes in a PLASTIC/EPOXY package with THROUGH-HOLE terminals.

Median Price

$0.252

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Chip1Stop

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$0.189

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Verical

USA . 250 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 550 parts In-Stock

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Nova Conductors

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Corohmni

South Africa . 94 parts In-Stock

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CoreStaff

Japan . 344 parts In-Stock

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$0.841

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$0.176

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$0.137

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344

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Argo Parts USA

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Overview

Unleash the power of innovation with Toshiba's TTA008B,Q(S Power Bipolar Junction Transistors. Crafted with precision and expertise, this PNP transistor offers seamless switching capabilities for a wide range of applications. With a maximum collector-emitter voltage of 80V and a minimum DC current gain of 60, this transistor guarantees reliable performance and efficiency. Say goodbye to limitations and hello to endless possibilities with Toshiba's cutting-edge technology. Elevate your projects with the quality and reliability that only Toshiba can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and resistant to damage.

Polarity or Channel Type: PNP

PNP transistors are suitable for high-side switching applications and are commonly used in circuits where positive voltage levels predominate.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and can be easily integrated into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient and reliable switching performance.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement on circuit boards and efficient use of space.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are well-suited for manual soldering operations.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options and enables compatibility with a wide range of circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure and stable mounting, ensuring reliability in various applications.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures consistent and reliable amplification in circuits.

Maximum Collector-Emitter Voltage: 80 V

With a maximum voltage rating of 80V, this transistor can handle moderate voltage levels safely and efficiently.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them suitable for a wide range of applications.

Maximum Collector Current (IC): 2 A

Capable of handling a maximum collector current of 2A, this transistor is suitable for medium-power applications.

Terminal Position: SINGLE

Single terminal position simplifies installation and ensures easy connectivity in circuit designs.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100MHz, this transistor offers fast response times and high-frequency capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TTA008B,Q(S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TTA008B,Q(S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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