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STD790A

STMicroelectronics

STD790A by STMicroelectronics

STD790A by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 15W, a collector current of 3A, and operates up to 150 °C. Its compact SO package with gull-wing terminals ensures efficient surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,672 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,672

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-

-

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Digiode

USA . 1,527 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,527

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Vyrian

USA . 270 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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270

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 704 parts In-Stock

1+ parts

$0.769

100+ parts

-

1k+ parts

$0.692

10k+ parts

-

704

$0.769

-

$0.692

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MKK Technologies

India . 2,377 parts In-Stock

1+ parts

$1.446

100+ parts

-

1k+ parts

-

10k+ parts

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2,377

$1.446

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-

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DigiPath Technology Company

USA . 2,377 parts In-Stock

1+ parts

$1.446

100+ parts

-

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-

10k+ parts

-

2,377

$1.446

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-

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Kepictronics

USA . 20,000 parts In-Stock

1+ parts

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20,000

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Corphita

USA . 1,353 parts In-Stock

1+ parts

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1,353

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Parana Technologies

USA . 391 parts In-Stock

1+ parts

-

100+ parts

$0.920

1k+ parts

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391

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$0.920

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Overview

Unlock exceptional performance with the STD790A from STMicroelectronics, a leader in power solutions. This PNP Bipolar Junction Transistor excels in switching applications, delivering reliability and efficiency for your designs. Its compact surface-mount package ensures easy integration, while its robust thermal capabilities support high-performance tasks. Experience the perfect blend of quality and innovation, empowering your projects to thrive with unmatched value and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor durable, lightweight, and suitable for mass production.

Polarity or Channel Type: PNP

PNP transistors are ideal for applications requiring high-speed switching and amplification, making this product versatile.

Configuration: SINGLE

A single configuration simplifies circuit design and layout, making integration easier.

Transistor Application: SWITCHING

Designed for switching applications, this transistor excels in scenarios involving rapid on/off control, enhancing efficiency.

Surface Mount: YES

Surface mount design allows for compact circuit layouts, facilitating modern PCB design and assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient, perfect for high-density applications.

Terminal Form: GULL WING

Gull wing terminals offer excellent mechanical stability and reliable soldering connections.

No. of Terminals: 2

With only 2 terminals, this transistor is easy to use in simple applications, reducing complexity.

Maximum Power Dissipation (Abs): 15 W

A maximum power dissipation of 15 W allows for high-performance applications without overheating concerns.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained designs, making this transistor suitable for compact devices.

Minimum DC Current Gain (hFE): 90

A minimum hFE of 90 ensures efficient amplification, making it a good choice for signal processing applications.

Maximum Operating Temperature: 150 °C

Its high maximum operating temperature indicates reliability and robustness in demanding environments.

Transistor Element Material: SILICON

Silicon material contributes to the transistor's stability and performance, ensuring consistent operation.

Maximum Collector Current (IC): 3 A

With a capability of handling up to 3 A current, this transistor is well-suited for power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and improves corrosion resistance, ensuring longevity.

Terminal Position: SINGLE

A single terminal position streamlines assembly and reduces potential errors during installation.

Nominal Transition Frequency (fT): 100 MHz

A transition frequency of 100 MHz allows for fast switching and high-frequency applications, enhancing versatility.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STD790A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

90

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STD790A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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