Loading...

STBV32G

STMicroelectronics

STBV32G by STMicroelectronics

STBV32G by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1.5W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,046 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,046

-

-

-

-

Vyrian

USA . 3,763 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,763

-

-

-

-

Anansix

USA . 2,404 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,404

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 889 parts In-Stock

1+ parts

$1.408

100+ parts

-

1k+ parts

$1.267

10k+ parts

-

889

$1.408

-

$1.267

-

MKK Technologies

India . 134 parts In-Stock

1+ parts

$2.647

100+ parts

-

1k+ parts

-

10k+ parts

-

134

$2.647

-

-

-

DigiPath Technology Company

USA . 134 parts In-Stock

1+ parts

$2.647

100+ parts

-

1k+ parts

-

10k+ parts

-

134

$2.647

-

-

-

AZTECH Wire

Italy . 929 parts In-Stock

1+ parts

$10.960

100+ parts

-

1k+ parts

-

10k+ parts

-

929

$10.960

-

-

-

Component Stockers USA

USA . 743 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

743

$99.990

-

-

-

Assy Fe

Spain . 5,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,200

-

-

-

-

Alle Elektronik GmbH

Germany . 4,533 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,533

-

-

-

-

Perfect Parts

USA . 3,246 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,246

-

-

-

-

Corphita

USA . 2,465 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,465

-

-

-

-

Parana Technologies

USA . 751 parts In-Stock

1+ parts

-

100+ parts

$1.683

1k+ parts

-

10k+ parts

-

751

-

$1.683

-

-

Overview

Unlock the power of efficiency with the STBV32G from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for superior switching performance, this NPN transistor ensures reliable operation even in demanding environments. With its robust construction and high thermal stability, the STBV32G is perfect for diverse applications, making it an ideal choice for engineers who value quality and performance. Experience unmatched reliability and elevate your projects with this exceptional component!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the product reliable for long-term applications.

Polarity or Channel Type: NPN

NPN transistors are ideal for switching and amplification applications, providing good performance in various electronic circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it an efficient choice for compact applications.

Transistor Application: SWITCHING

Designed for switching applications, it enables efficient control of electrical power and fast response times in circuits.

Package Shape: ROUND

The round package shape helps in optimal thermal dissipation and assures compatibility with standard mounting techniques.

Terminal Form: THROUGH-HOLE

Through-hole mounting offers robust connections and ease of handling during assembly, improving reliability in various applications.

No. of Terminals: 3

With 3 terminals, it provides the necessary connections for emitter, base, and collector, making it versatile for applications.

Maximum Power Dissipation (Abs): 1.5 W

A maximum power dissipation of 1.5 W allows the transistor to handle significant power levels, making it suitable for moderate load applications.

Package Style (Meter): CYLINDRICAL

The cylindrical style can help with easier integration in various circuit configurations and supports effective heat management.

Minimum DC Current Gain (hFE): 5

A minimum current gain of 5 ensures adequate amplification for low signal conditions, enhancing the transistor's performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor remains reliable under challenging thermal conditions.

Maximum Collector-Emitter Voltage: 400 V

A maximum collector-emitter voltage of 400 V allows for high voltage applications, expanding the range of potential uses for this transistor.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electronic properties and stability, making it a preferred choice for BJTs.

Maximum Collector Current (IC): 1.5 A

The capability to handle up to 1.5 A of collector current makes this transistor suitable for medium-power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers good solderability and prevents corrosion, ensuring reliable and stable electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates easy integration into circuit boards, providing better layout flexibility and efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STBV32G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STBV32G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 6