Loading...

STBV32G-AP

STMicroelectronics

STBV32G-AP by STMicroelectronics

STBV32G-AP by STMicroelectronics is a single NPN BJT designed for efficient switching applications. It features a max power dissipation of 1.5 W, operates up to 150 °C, and supports collector-emitter voltages up to 400 V. Ideal for various electronic circuits requiring reliable performance.

Median Price

$0.940

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 842 parts In-Stock

1+ parts

$0.940

100+ parts

$0.381

1k+ parts

$0.293

10k+ parts

$0.199

842

$0.940

$0.381

$0.293

$0.199

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,326 parts In-Stock

1+ parts

$0.893

100+ parts

-

1k+ parts

-

10k+ parts

-

4,326

$0.893

-

-

-

Vyrian

USA . 3,362 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,362

-

-

-

-

Anansix

USA . 2,606 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,606

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,168 parts In-Stock

1+ parts

$0.660

100+ parts

-

1k+ parts

$0.594

10k+ parts

-

2,168

$0.660

-

$0.594

-

Corphita

USA . 1,640 parts In-Stock

1+ parts

$0.846

100+ parts

-

1k+ parts

-

10k+ parts

-

1,640

$0.846

-

-

-

MKK Technologies

India . 2,199 parts In-Stock

1+ parts

$1.240

100+ parts

-

1k+ parts

-

10k+ parts

-

2,199

$1.240

-

-

-

DigiPath Technology Company

USA . 2,199 parts In-Stock

1+ parts

$1.240

100+ parts

-

1k+ parts

-

10k+ parts

-

2,199

$1.240

-

-

-

Parana Technologies

USA . 1,356 parts In-Stock

1+ parts

-

100+ parts

$0.789

1k+ parts

-

10k+ parts

-

1,356

-

$0.789

-

-

Perfect Parts

USA . 953 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

953

-

-

-

-

Alle Elektronik GmbH

Germany . 842 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

842

-

-

-

-

Microchip USA

USA . 454 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

454

-

-

-

-

Overview

Elevate your projects with the STBV32G-AP from STMicroelectronics, a trusted leader in innovation and quality. This powerful NPN transistor is engineered for efficient switching applications, ensuring reliable performance under demanding conditions. With its robust design, it seamlessly fits into diverse electronics, from consumer gadgets to industrial systems. Experience exceptional value and peace of mind knowing you're backed by a manufacturer renowned for excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for efficient switching capabilities, commonly used in amplification and signal processing circuits.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making it easier for engineers to implement.

Transistor Application: SWITCHING

Designed for switching applications, this transistor ensures quick response times and enhances circuit efficiency.

Package Shape: ROUND

The round package shape can be advantageous for heat dissipation and aesthetic circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides robust mechanical connections, ensuring reliable performance in demanding environments.

No. of Terminals: 3

Three terminals allow for easy connection in a standard configuration, facilitating simplified circuit design.

Maximum Power Dissipation (Abs): 1.5 W

A maximum power dissipation of 1.5 W means the transistor can handle significant power without overheating, increasing reliability.

Package Style (Meter): CYLINDRICAL

Cylindrical package style often helps with mounting in various applications, promoting versatility in design.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 indicates sufficient amplification capability for general-purpose applications.

Maximum Operating Temperature: 150 °C

With an operating temperature of 150 °C, the transistor can operate in high-temperature environments, ensuring stability.

Maximum Collector-Emitter Voltage: 400 V

A maximum voltage rating of 400 V enables use in high-voltage applications, enhancing the transistor's versatility.

Transistor Element Material: SILICON

Silicon as the element material provides excellent performance characteristics, including thermal stability and efficiency.

Maximum Collector Current (IC): 1.5 A

The ability to handle up to 1.5 A of collector current makes this transistor suitable for medium-range current applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish helps improve solderability and corrosion resistance, enhancing overall reliability in connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for easy integration into PCB designs, promoting efficient layout and assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STBV32G-AP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STBV32G-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 6