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STBV32

STMicroelectronics

STBV32 by STMicroelectronics

STBV32 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 1.5A, ideal for switching applications. It has a min. DC current gain of 5 and can dissipate up to 1.1W power, operating at a max temp of 150 °C in a cylindrical package with matte tin finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

R&J Components

USA . 7,500 parts In-Stock

1+ parts

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7,500

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Vyrian

USA . 3,091 parts In-Stock

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3,091

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Digiode

USA . 2,925 parts In-Stock

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2,925

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Anansix

USA . 349 parts In-Stock

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349

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 212 parts In-Stock

1+ parts

$0.939

100+ parts

-

1k+ parts

$0.845

10k+ parts

-

212

$0.939

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$0.845

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MKK Technologies

India . 2,292 parts In-Stock

1+ parts

$1.766

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2,292

$1.766

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DigiPath Technology Company

USA . 2,292 parts In-Stock

1+ parts

$1.766

100+ parts

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2,292

$1.766

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A-Z Elektronik GmbH

Germany . 7,214 parts In-Stock

1+ parts

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7,214

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Kepictronics

USA . 5,153 parts In-Stock

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5,153

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Corphita

USA . 3,529 parts In-Stock

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3,529

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S.R.D Solutions

India . 3,000 parts In-Stock

1+ parts

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3,000

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Parana Technologies

USA . 83 parts In-Stock

1+ parts

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$1.123

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83

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$1.123

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Overview

Unlock the power of reliable switching with the STBV32 from STMicroelectronics. As a leader in the industry, STMicroelectronics delivers cutting-edge Power Bipolar Junction Transistors that are built to last. The STBV32 is perfect for a wide range of applications, offering customers exceptional value and performance. Trust STMicroelectronics to provide you with top-quality products that meet your needs and exceed your expectations. Experience the difference with the STBV32 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, ideal for applications where weight and cost are a concern.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient switching operations and is commonly used in amplification and switching circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures ease of integration into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast switching speeds and minimal power loss.

Package Shape: ROUND

The round package shape allows for easy installation and flexibility in mounting options.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide reliable electrical connections and mechanical stability in circuit board mounting.

Maximum Power Dissipation (Abs): 1.1 W

With a high maximum power dissipation, this transistor can handle high power loads and operate reliably in demanding conditions.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers good thermal dissipation and mechanical protection, ensuring long-term reliability.

Minimum DC Current Gain (hFE): 5

The minimum DC current gain of 5 ensures stable and consistent amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating allows for operation in high voltage circuits, expanding the range of applications.

Transistor Element Material: SILICON

Silicon transistor elements offer high performance, reliability, and efficiency, making it a popular choice for a wide range of applications.

Maximum Collector Current (IC): 1.5 A

The maximum collector current rating of 1.5 A enables the transistor to handle high current loads, making it suitable for power switching applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy PCB mounting and soldering, enhancing the overall reliability and performance of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STBV32 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STBV32 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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