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STL106D

STMicroelectronics

STL106D by STMicroelectronics

STL106D by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.5W, a collector-emitter voltage of 230V, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,027 parts In-Stock

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8,027

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Digiode

USA . 3,042 parts In-Stock

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3,042

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Anansix

USA . 1,419 parts In-Stock

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1,419

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,268 parts In-Stock

1+ parts

$0.709

100+ parts

-

1k+ parts

$0.638

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1,268

$0.709

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$0.638

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.948

100+ parts

$0.863

1k+ parts

$0.777

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-

100

$0.948

$0.863

$0.777

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MKK Technologies

India . 1,707 parts In-Stock

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$1.334

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1,707

$1.334

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DigiPath Technology Company

USA . 1,707 parts In-Stock

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$1.334

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1,707

$1.334

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AZTECH Wire

Italy . 810 parts In-Stock

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$15.100

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810

$15.100

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Alle Elektronik GmbH

Germany . 6,494 parts In-Stock

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6,494

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Corphita

USA . 4,570 parts In-Stock

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4,570

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Parana Technologies

USA . 1,406 parts In-Stock

1+ parts

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$0.848

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1,406

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$0.848

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Overview

Unlock the potential of your electronic designs with the STL106D from STMicroelectronics—a leader in innovative semiconductor solutions. This robust NPN transistor, crafted for reliable switching applications, offers superior performance and high efficiency in a compact cylindrical package. With its built-in diode and impressive power capabilities, the STL106D is perfect for diverse applications, ensuring your projects are both powerful and dependable. Experience unmatched quality and reliability that only STMicroelectronics can deliver!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures a lightweight and durable design, making the transistor suitable for various applications without adding excessive weight.

Polarity or Channel Type: NPN

NPN configuration is widely used in switching applications, providing good performance and versatility in circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for protection against back EMF, making it ideal for inductive loads and enhancing circuit reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient operation and faster response times in electronic circuits.

Package Shape: ROUND

The round shape can simplify PCB layout and component placement, facilitating easier integration into various designs.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust connections and stability, which is essential in applications subject to mechanical stress.

No. of Terminals: 3

Having three terminals simplifies connections while providing the necessary functionality for most basic circuits.

Maximum Power Dissipation (Abs): 1.5 W

A maximum power dissipation of 1.5 W allows this transistor to handle moderate power levels, making it suitable for a range of applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style optimizes space in circuit boards and offers compatibility with standard mounting techniques.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 indicates good amplification capabilities, enhancing circuit performance in necessary applications.

Maximum Operating Temperature: 150 °C

The ability to operate at temperatures up to 150 °C ensures reliability in demanding environments where heat may be a concern.

Maximum Collector-Emitter Voltage: 230 V

With a high collector-emitter voltage rating of 230 V, this transistor can be employed in high-voltage applications safely.

Transistor Element Material: SILICON

Silicon as the elemental material promotes excellent performance and thermal stability, widely favored for its semiconductor properties.

Maximum Collector Current (IC): 1.5 A

A maximum collector current capacity of 1.5 A allows this transistor to drive moderate loads effectively, making it versatile for various applications.

Terminal Position: BOTTOM

Bottom terminal positioning can facilitate streamlined PCB designs while ensuring optimal thermal performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STL106D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

230 V

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STL106D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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