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STL128DFP

STMicroelectronics

STL128DFP by STMicroelectronics

STL128DFP by STMicroelectronics is a NPN BJT transistor with 400V max collector-emitter voltage, 4A max collector current, and 30W max power dissipation. Ideal for switching applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

Median Price

$1.640

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,973 parts In-Stock

1+ parts

$1.640

100+ parts

$0.696

1k+ parts

$0.500

10k+ parts

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1,973

$1.640

$0.696

$0.500

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Distributors (In-Stock)

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Digiode

USA . 3,093 parts In-Stock

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$1.558

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3,093

$1.558

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Vyrian

USA . 1,158 parts In-Stock

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$1.640

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1,158

$1.640

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Anansix

USA . 2,407 parts In-Stock

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2,407

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Bristol Electronics

USA . 987 parts In-Stock

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987

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ACDS - Activité Composants Distribution Service

France . 987 parts In-Stock

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987

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Dan-Mar Components

USA . 987 parts In-Stock

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987

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R&J Components

USA . 950 parts In-Stock

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950

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,501 parts In-Stock

1+ parts

$0.307

100+ parts

-

1k+ parts

$0.277

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1,501

$0.307

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$0.277

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MKK Technologies

India . 2,036 parts In-Stock

1+ parts

$0.578

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2,036

$0.578

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DigiPath Technology Company

USA . 2,036 parts In-Stock

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$0.578

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2,036

$0.578

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Ampacity Inc.

Singapore . 1,770 parts In-Stock

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$1.390

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1,770

$1.390

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Corphita

USA . 272 parts In-Stock

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$1.476

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272

$1.476

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 25,422 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Microchip USA

USA . 4,296 parts In-Stock

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4,296

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Perfect Parts

USA . 2,178 parts In-Stock

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2,178

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Alle Elektronik GmbH

Germany . 1,978 parts In-Stock

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1,978

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Parana Technologies

USA . 1,320 parts In-Stock

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$0.367

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1,320

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$0.367

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Overview

The STL128DFP by STMicroelectronics is a top-tier Power BJT that sets the standard for quality and performance. With a single configuration and built-in diode, this transistor is ideal for switching applications. Its robust construction and reliable operation make it a standout choice for professionals seeking unmatched value and dependability. Whether you're working in automotive, industrial or consumer electronics, the STL128DFP delivers superior power dissipation, high collector-emitter voltage, and maximum current capabilities. Trust STMicroelectronics to provide the innovative solutions you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the transistor.

Polarity or Channel Type: NPN

Commonly used in electronic circuits, offering reliable performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient setup with added functionality of a built-in diode for specific applications.

Transistor Application: SWITCHING

Suitable for switching applications, ensuring efficient performance.

Package Shape: RECTANGULAR

Allows for easy installation and placement on circuit boards.

Terminal Form: THROUGH-HOLE

Enables secure connections on the circuit board for reliable operation.

Maximum Power Dissipation (Abs): 30 W

Capable of handling high-power applications without overheating.

Package Style (Meter): FLANGE MOUNT

Facilitates easy mounting and installation in various equipment.

Minimum DC Current Gain (hFE): 10

Ensures amplification of current signal for effective operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 400 V

Capable of handling high voltages, making it versatile for different applications.

Transistor Element Material: SILICON

Offers reliable performance and durability for long-term use.

Maximum Collector Current (IC): 4 A

Can handle high current flow, suitable for power applications.

Terminal Position: SINGLE

Simplified design with single terminal position for easy connections.

Case Connection: ISOLATED

Prevents interference and ensures stable operation in the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STL128DFP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STL128DFP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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