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STL128D

STMicroelectronics

STL128D by STMicroelectronics

STL128D by STMicroelectronics is a NPN BJT transistor with 400V VCE, 4A IC, and 65W Ptot. Ideal for switching applications due to its single configuration with built-in diode. Package style is flange mount, making it suitable for high-power requirements in various electronic designs.

Median Price

$1.420

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,492 parts In-Stock

1+ parts

$1.130

100+ parts

$0.644

1k+ parts

$0.488

10k+ parts

-

1,492

$1.130

$0.644

$0.488

-

DigiKey

USA . 518 parts In-Stock

1+ parts

$1.710

100+ parts

$0.728

1k+ parts

$0.524

10k+ parts

$0.423

518

$1.710

$0.728

$0.524

$0.423

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,225 parts In-Stock

1+ parts

$1.074

100+ parts

-

1k+ parts

-

10k+ parts

-

2,225

$1.074

-

-

-

Vyrian

USA . 1,506 parts In-Stock

1+ parts

$1.130

100+ parts

-

1k+ parts

-

10k+ parts

-

1,506

$1.130

-

-

-

Anansix

USA . 610 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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610

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 899 parts In-Stock

1+ parts

$0.300

100+ parts

-

1k+ parts

$0.270

10k+ parts

-

899

$0.300

-

$0.270

-

MKK Technologies

India . 1,089 parts In-Stock

1+ parts

$0.564

100+ parts

-

1k+ parts

-

10k+ parts

-

1,089

$0.564

-

-

-

DigiPath Technology Company

USA . 1,089 parts In-Stock

1+ parts

$0.564

100+ parts

-

1k+ parts

-

10k+ parts

-

1,089

$0.564

-

-

-

Ampacity Inc.

Singapore . 745 parts In-Stock

1+ parts

$0.960

100+ parts

-

1k+ parts

-

10k+ parts

-

745

$0.960

-

-

-

Corphita

USA . 1,073 parts In-Stock

1+ parts

$1.017

100+ parts

-

1k+ parts

-

10k+ parts

-

1,073

$1.017

-

-

-

Microchip USA

USA . 5,970 parts In-Stock

1+ parts

$7.735

100+ parts

-

1k+ parts

-

10k+ parts

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5,970

$7.735

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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10,000

-

-

-

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Parana Technologies

USA . 1,686 parts In-Stock

1+ parts

-

100+ parts

$0.359

1k+ parts

-

10k+ parts

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1,686

-

$0.359

-

-

Kepictronics

USA . 832 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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832

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-

-

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Alle Elektronik GmbH

Germany . 520 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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520

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Overview

Upgrade your power systems with the STL128D by STMicroelectronics. As a trusted manufacturer, STMicroelectronics delivers top-notch quality and reliability in their Power Bipolar Junction Transistors. This NPN transistor with a built-in diode is ideal for switching applications, offering a maximum operating temperature of 150°C and a collector-emitter voltage of 400V. With a package style of flange mount and through-hole terminals, this transistor is easy to integrate into your designs. Trust STMicroelectronics for high-performance transistors that deliver exceptional value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product suitable for a wide range of electronic projects.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier and more efficient switching operations, improving the overall performance of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast and reliable switching operations.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and secure the transistor onto a circuit board, ensuring a stable connection.

Maximum Power Dissipation (Abs): 65 W

With a high maximum power dissipation, this transistor can handle high-power applications without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy installation and heat dissipation, enhancing the overall performance of the transistor.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 indicates good amplification capabilities, ensuring accurate signal processing in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand high temperatures and operate reliably in various environments.

Maximum Collector-Emitter Voltage: 400 V

The high collector-emitter voltage rating allows this transistor to handle higher voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring stable performance and long-term reliability.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this transistor can handle high current loads without any issues.

Terminal Position: SINGLE

A single terminal position simplifies the connection process and ensures proper alignment during installation.

Case Connection: COLLECTOR

The case connection at the collector terminal provides easy access for connecting external components, enhancing the flexibility of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STL128D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STL128D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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