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STL128DN

STMicroelectronics

STL128DN by STMicroelectronics

STL128DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400 V, a power dissipation of 40 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,629 parts In-Stock

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3,629

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Vyrian

USA . 2,276 parts In-Stock

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2,276

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Anansix

USA . 253 parts In-Stock

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253

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IDEA Electronic Components Group

UK . 555 parts In-Stock

1+ parts

$1.322

100+ parts

-

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$1.190

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555

$1.322

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$1.190

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MKK Technologies

India . 685 parts In-Stock

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$2.486

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685

$2.486

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DigiPath Technology Company

USA . 685 parts In-Stock

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$2.486

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685

$2.486

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AZTECH Wire

Italy . 367 parts In-Stock

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$16.660

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367

$16.660

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 19,435 parts In-Stock

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Authorized Procurement Solutions

USA . 9,000 parts In-Stock

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9,000

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Kepictronics

USA . 8,500 parts In-Stock

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8,500

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Corphita

USA . 4,283 parts In-Stock

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4,283

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Alle Elektronik GmbH

Germany . 4,065 parts In-Stock

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4,065

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Parana Technologies

USA . 618 parts In-Stock

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$1.581

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618

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$1.581

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Overview

Unlock the power of innovation with the STL128DN from STMicroelectronics, a leader in reliable semiconductor solutions. This robust NPN transistor excels in switching applications, offering exceptional performance and efficiency for your projects. With superior quality backed by decades of expertise, it ensures longevity and reliability, making it ideal for industrial automation, consumer electronics, and automotive systems. Elevate your designs with STMicroelectronics—where excellence meets dependability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy not only provides durability but also helps in reducing weight and cost, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching applications, offering efficient performance in various circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances versatility and protects against reverse polarity, increasing the reliability of the circuit.

Transistor Application: SWITCHING

Designed for switching applications, this transistor is ideal for controlling a wide range of electrical loads.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy integration into PCB designs, promoting efficient use of space.

Terminal Form: THROUGH-HOLE

Through-hole design ensures robust mechanical connections, making it a reliable choice for high-stress environments.

No. of Terminals: 3

With three terminals, this transistor can be easily integrated into a variety of circuits, providing flexibility in design.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows the transistor to operate under substantial load without overheating, ensuring stable performance.

Package Style (Meter): FLANGE MOUNT

Flange mount offers easy installation and secure attachment, enhancing the robustness of the assembly.

Minimum DC Current Gain (hFE): 8

A minimum gain of 8 ensures sufficient amplification for the signal, making it suitable for a variety of small-signal applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows the transistor to function reliably in demanding environments, extending its application range.

Maximum Collector-Emitter Voltage: 400 V

With a high voltage rating, this transistor can handle significant electrical stress, making it ideal for high-voltage applications.

Transistor Element Material: SILICON

Silicon construction provides excellent thermal stability and performance, ensuring longevity and reliability.

Maximum Collector Current (IC): 4 A

A maximum collector current of 4 A allows for controlling higher power loads, making it suitable for diverse applications.

Terminal Position: SINGLE

Single terminal position simplifies layout and design, making it easier for engineers to incorporate into their circuits.

Case Connection: COLLECTOR

Direct connection of the collector improves efficiency in current flow, optimizing overall transistor performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STL128DN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STL128DN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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