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STL128DNFP

STMicroelectronics

STL128DNFP by STMicroelectronics

STL128DNFP by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 28W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,645 parts In-Stock

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4,645

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Vyrian

USA . 3,767 parts In-Stock

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3,767

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Anansix

USA . 515 parts In-Stock

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515

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 829 parts In-Stock

1+ parts

$0.384

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$0.345

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829

$0.384

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$0.345

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MKK Technologies

India . 1,243 parts In-Stock

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$0.721

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1,243

$0.721

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DigiPath Technology Company

USA . 1,243 parts In-Stock

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$0.721

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1,243

$0.721

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AZTECH Wire

Italy . 1,004 parts In-Stock

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$10.870

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1,004

$10.870

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Component Stockers USA

USA . 489 parts In-Stock

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$99.990

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489

$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,894 parts In-Stock

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Alle Elektronik GmbH

Germany . 8,697 parts In-Stock

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8,697

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Assy Fe

Spain . 1,998 parts In-Stock

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Corphita

USA . 1,499 parts In-Stock

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1,499

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Parana Technologies

USA . 1,049 parts In-Stock

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$0.459

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1,049

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$0.459

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Overview

Unlock the potential of your electronic designs with the STL128DNFP from STMicroelectronics, a leader in high-quality semiconductor solutions. This robust NPN power transistor ensures efficient switching performance, making it ideal for various applications in industrial and consumer electronics. With its impressive power handling and reliability, you can trust the STL128DNFP to enhance your projects, driving efficiency and longevity while providing unmatched value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good insulation and thermal stability, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for efficient switching and amplification, making it ideal for signal processing.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances protection against back-EMF, improving reliability in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring quick response times and reliable operation.

Package Shape: RECTANGULAR

The rectangular shape aids in space-efficient PCB designs and enhances mounting stability.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are easier to solder on PCBs for reliable connections.

No. of Terminals: 3

With three terminals, this BJT can be easily implemented in basic switching and amplification circuits.

Maximum Power Dissipation (Abs): 28 W

High power dissipation capability allows the transistor to handle substantial loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances thermal dissipation and ensures secure mounting on various surfaces.

Minimum DC Current Gain (hFE): 8

A minimum gain of 8 ensures adequate amplification for a variety of applications, making it versatile.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance ensures reliable performance in demanding environments.

Maximum Collector-Emitter Voltage: 400 V

With a high voltage rating, this BJT can be used in high-voltage applications, offering flexibility in design.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and electronic characteristics, ensuring efficient operation.

Maximum Collector Current (IC): 4 A

The ability to handle up to 4 A of collector current makes this transistor suitable for power applications.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and layout on PCBs.

Case Connection: ISOLATED

Isolated case connection improves safety and reduces the risk of short circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STL128DNFP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STL128DNFP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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