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TIP42CG

Onsemi

TIP42CG by Onsemi

TIP42CG by Onsemi is a PNP power bipolar junction transistor with a max collector-emitter voltage of 100V and a max collector current of 6A. It is commonly used for switching applications due to its high power dissipation of 65W and low min DC current gain (hFE) of 15.

Median Price

$0.588

Lifecycle Status

Suppliers In-Stock

32

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,377 parts In-Stock

1+ parts

$0.328

100+ parts

$0.308

1k+ parts

$0.279

10k+ parts

-

1,377

$0.328

$0.308

$0.279

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Farnell

UK . 3,818 parts In-Stock

1+ parts

$1.110

100+ parts

$0.455

1k+ parts

$0.399

10k+ parts

$0.371

3,818

$1.110

$0.455

$0.399

$0.371

Mouser Electronics

USA . 11,617 parts In-Stock

1+ parts

$1.370

100+ parts

$0.564

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11,617

$1.370

$0.564

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Newark

USA . 4,213 parts In-Stock

1+ parts

$1.380

100+ parts

$0.593

1k+ parts

$0.429

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4,213

$1.380

$0.593

$0.429

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Adafruit Industries

USA . 150 parts In-Stock

1+ parts

$1.500

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$1.425

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$1.425

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150

$1.500

$1.425

$1.425

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Element14

Singapore . 3,808 parts In-Stock

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$1.810

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3,808

$1.810

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DigiKey

USA . 9,840 parts In-Stock

1+ parts

$1.950

100+ parts

$0.840

1k+ parts

$0.610

10k+ parts

$0.508

9,840

$1.950

$0.840

$0.610

$0.508

Arrow

USA . 22,927 parts In-Stock

1+ parts

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100+ parts

$0.481

1k+ parts

$0.390

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22,927

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$0.481

$0.390

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Verical

USA . 22,900 parts In-Stock

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$0.481

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$0.390

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22,900

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$0.481

$0.390

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Future Electronics

Canada . 20,000 parts In-Stock

1+ parts

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100+ parts

$0.455

1k+ parts

$0.430

10k+ parts

$0.410

20,000

-

$0.455

$0.430

$0.410

Chip1Stop

Japan . 6,635 parts In-Stock

1+ parts

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100+ parts

$0.497

1k+ parts

$0.350

10k+ parts

$0.312

6,635

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$0.497

$0.350

$0.312

Master Electronics

USA . 2,850 parts In-Stock

1+ parts

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100+ parts

$0.588

1k+ parts

$0.431

10k+ parts

$0.344

2,850

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$0.588

$0.431

$0.344

Flip Electronics (Authorized)

USA . 2,250 parts In-Stock

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2,250

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EBV Elektronik

Germany . 350 parts In-Stock

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350

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Avnet

USA . 250 parts In-Stock

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250

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RS (Exports)

UK . 150 parts In-Stock

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100+ parts

$0.409

1k+ parts

$0.374

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150

-

$0.409

$0.374

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 813 parts In-Stock

1+ parts

$0.299

100+ parts

-

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813

$0.299

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Nova Conductors

Japan . 70 parts In-Stock

1+ parts

$0.560

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70

$0.560

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TME

Poland . 1,011 parts In-Stock

1+ parts

$1.210

100+ parts

$0.493

1k+ parts

$0.396

10k+ parts

$0.382

1,011

$1.210

$0.493

$0.396

$0.382

IBS Electronics

USA . 58,485 parts In-Stock

1+ parts

-

100+ parts

$0.463

1k+ parts

$0.449

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58,485

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$0.463

$0.449

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NAC Semi

USA . 42,900 parts In-Stock

1+ parts

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$0.660

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42,900

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$0.660

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Flip Electronics

USA . 4,500 parts In-Stock

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4,500

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Vyrian

USA . 3,751 parts In-Stock

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3,751

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Bristol Electronics

USA . 850 parts In-Stock

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850

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Semtec, LLC

USA . 549 parts In-Stock

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549

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Chip Stock

USA . 405 parts In-Stock

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405

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LWI Electronics Inc

India . 137 parts In-Stock

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137

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NexGen Digital

USA . 82 parts In-Stock

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82

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ComSIT Distribution GmbH

Germany . 52 parts In-Stock

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52

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Microfarads

USA . 45 parts In-Stock

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45

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EMSNET

USA . 25 parts In-Stock

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25

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ACDS - Activité Composants Distribution Service

France . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,666 parts In-Stock

1+ parts

$0.268

100+ parts

-

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3,666

$0.268

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Semicontronic

India . 3,471 parts In-Stock

1+ parts

$0.268

100+ parts

$0.261

1k+ parts

$0.260

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3,471

$0.268

$0.261

$0.260

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Corphita

USA . 825 parts In-Stock

1+ parts

$0.284

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825

$0.284

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Component Stockers USA

USA . 16,932 parts In-Stock

1+ parts

$0.320

100+ parts

$0.300

1k+ parts

$0.270

10k+ parts

$0.270

16,932

$0.320

$0.300

$0.270

$0.270

Corohmni

South Africa . 206 parts In-Stock

1+ parts

$0.328

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206

$0.328

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Argo Parts USA

USA . 3,509 parts In-Stock

1+ parts

$0.381

100+ parts

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1k+ parts

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10k+ parts

$0.370

3,509

$0.381

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-

$0.370

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.560

100+ parts

$0.549

1k+ parts

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2,000

$0.560

$0.549

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Aztec Data Supply Inc.

USA . 26,909 parts In-Stock

1+ parts

$0.563

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26,909

$0.563

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Continental Prestige Electronics

USA . 8,224 parts In-Stock

1+ parts

$0.865

100+ parts

$0.657

1k+ parts

$0.466

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8,224

$0.865

$0.657

$0.466

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$1.500

100+ parts

$1.425

1k+ parts

$1.425

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150

$1.500

$1.425

$1.425

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Perfect Parts

USA . 88,583 parts In-Stock

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88,583

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Kepictronics

USA . 8,900 parts In-Stock

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8,900

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SupplyDigital Components

Austria . 7,183 parts In-Stock

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7,183

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GreenTree Electronics

Israel . 7,001 parts In-Stock

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7,001

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Kulean Microsystems

USA . 6,688 parts In-Stock

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6,688

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S.R.D Solutions

India . 5,890 parts In-Stock

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5,890

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Problanco Electronics

Mexico . 4,698 parts In-Stock

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4,698

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Allen Electronics Distributors

USA . 2,600 parts In-Stock

1+ parts

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100+ parts

$0.261

1k+ parts

$0.211

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2,600

-

$0.261

$0.211

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Robosynatics

Brazil . 1,628 parts In-Stock

1+ parts

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100+ parts

$0.171

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$0.171

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$0.171

1,628

-

$0.171

$0.171

$0.171

Lucentia Tech

USA . 1,628 parts In-Stock

1+ parts

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$0.171

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$0.171

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$0.171

1,628

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$0.171

$0.171

$0.171

Eastek

USA . 1,550 parts In-Stock

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1,550

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TANS Electronics

Latvia . 938 parts In-Stock

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938

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UHIMA Technologies

Türkiye . 933 parts In-Stock

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933

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Glotronic Ltd.

UK . 531 parts In-Stock

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531

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Authorized Procurement Solutions

USA . 400 parts In-Stock

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400

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Cyclops Electronics Ltd (Excess)

UK . 10 parts In-Stock

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10

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Overview

Discover the TIP42CG by Onsemi, a high-quality Power Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted industry leader, this transistor is perfect for switching applications. With its PNP polarity and single configuration, it provides optimal functionality and ease of use. The TIP42CG's value lies in its impressive 65W maximum power dissipation and 100V maximum collector-emitter voltage. Whether you're designing power supplies or industrial control systems, this product guarantees efficiency and durability. Trust Onsemi to deliver superior quality, and experience the benefits of the TIP42CG today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy packaging provides durability and resistance to external factors, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits requiring this specific transistor type, expanding the usability of this product.

Configuration: SINGLE

With a single configuration, this transistor simplifies circuit design and reduces complexity, making it an efficient choice for various applications.

Transistor Application: SWITCHING

The switching capability of this transistor allows for efficient control of electrical currents, making it ideal for applications that require fast and precise switching.

Package Shape: RECTANGULAR

The rectangular package shape enhances the product's compatibility and makes it easy to mount on circuit boards or other electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enables secure and reliable connections, ensuring excellent performance and making this transistor a dependable choice.

No. of Elements: 1

With a single element, this transistor simplifies circuit designs, reducing costs and enhancing reliability.

No. of Terminals: 3

The three terminals provide ease of connection and flexibility in circuit integration, offering versatility in various applications.

Maximum Power Dissipation (Abs): 65 W

The high power dissipation capability of 65 W ensures stable operation even in demanding conditions, making this product suitable for power-intensive applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style enhances the mechanical stability and ease of installation, making it a convenient choice for mounting on surfaces or panels.

Minimum DC Current Gain (hFE): 15

The high minimum DC current gain of 15 allows for efficient amplification of small currents, making this transistor suitable for low-power signal amplification applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, ensuring reliable performance even under challenging conditions.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage rating of 100 V enables this transistor to handle higher voltage levels, expanding its applicability in various circuits.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides excellent performance and reliability, making this product a preferred choice for many electronic applications.

Maximum Collector Current (IC): 6 A

The maximum collector current of 6 A allows this transistor to handle high current loads, making it suitable for power-driven applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good conductivity and corrosion resistance, providing long-lasting and reliable connections.

Terminal Position: SINGLE

With a single terminal position, this transistor simplifies circuit layout and installation processes, enhancing convenience and usability.

Case Connection: COLLECTOR

The case connection at the collector terminal offers improved thermal dissipation and ease of circuit design, making this transistor a suitable choice for heat-sensitive applications.

Nominal Transition Frequency (fT): 3 MHz

The high nominal transition frequency of 3 MHz allows for efficient high-frequency signal processing, making this transistor suitable for applications that require fast switching and amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP42CG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP42CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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