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TIP122FP

STMicroelectronics

TIP122FP by STMicroelectronics

TIP122FP by STMicroelectronics is a NPN power BJT with 100V VCEO, 5A IC, and 2W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates up to 150°C and comes in a rectangular package with through-hole terminals.

Median Price

$1.401

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 70 parts In-Stock

1+ parts

$1.401

100+ parts

$1.331

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$1.331

10k+ parts

-

70

$1.401

$1.331

$1.331

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.315

100+ parts

-

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100

$0.315

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Digiode

USA . 4,215 parts In-Stock

1+ parts

$1.331

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4,215

$1.331

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Chip Stock

USA . 33,740 parts In-Stock

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33,740

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Vyrian

USA . 6,348 parts In-Stock

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6,348

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R&J Components

USA . 2,111 parts In-Stock

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2,111

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Anansix

USA . 1,961 parts In-Stock

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1,961

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Lakeland Logistics Inc

USA . 150 parts In-Stock

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150

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Bristol Electronics

USA . 100 parts In-Stock

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100

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PC Components Company LLC

USA . 5 parts In-Stock

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5

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Prism Electronics

USA . 2 parts In-Stock

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2

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Distributors (Availability)

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Continental Prestige Electronics

USA . 4,023 parts In-Stock

1+ parts

$0.315

100+ parts

-

1k+ parts

-

10k+ parts

$0.309

4,023

$0.315

-

-

$0.309

Argo Parts USA

USA . 3,523 parts In-Stock

1+ parts

$0.315

100+ parts

-

1k+ parts

-

10k+ parts

$0.306

3,523

$0.315

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-

$0.306

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.315

100+ parts

-

1k+ parts

$0.299

10k+ parts

$0.293

100

$0.315

-

$0.299

$0.293

Aztec Data Supply Inc.

USA . 5,507 parts In-Stock

1+ parts

$0.840

100+ parts

-

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5,507

$0.840

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Corohmni

South Africa . 87 parts In-Stock

1+ parts

$0.880

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87

$0.880

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Ampacity Inc.

Singapore . 70 parts In-Stock

1+ parts

$1.190

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70

$1.190

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Semicontronic

India . 70 parts In-Stock

1+ parts

$1.190

100+ parts

$1.160

1k+ parts

$1.154

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70

$1.190

$1.160

$1.154

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Corphita

USA . 803 parts In-Stock

1+ parts

$1.261

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803

$1.261

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$1.401

100+ parts

$1.331

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$1.331

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70

$1.401

$1.331

$1.331

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IDEA Electronic Components Group

UK . 586 parts In-Stock

1+ parts

$1.644

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$1.480

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586

$1.644

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$1.480

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MKK Technologies

India . 1,700 parts In-Stock

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$3.092

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1,700

$3.092

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DigiPath Technology Company

USA . 1,700 parts In-Stock

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$3.092

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1,700

$3.092

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AZTECH Wire

Italy . 222 parts In-Stock

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$11.724

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222

$11.724

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Kepictronics

USA . 15,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,390 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,739 parts In-Stock

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Parana Technologies

USA . 156 parts In-Stock

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$1.966

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Perfect Parts

USA . 20 parts In-Stock

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20

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Robosynatics

Brazil . 10 parts In-Stock

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$8.889

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$8.889

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$8.889

10

-

$8.889

$8.889

$8.889

Lucentia Tech

USA . 10 parts In-Stock

1+ parts

-

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$8.889

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$8.889

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$8.889

10

-

$8.889

$8.889

$8.889

Overview

Upgrade your power switching applications with the TIP122FP by STMicroelectronics. Manufactured with top-quality materials, this NPN Darlington transistor provides high power dissipation and excellent performance. Its built-in diode and resistor configuration make it a versatile choice for a wide range of applications. With a maximum collector current of 5A and a minimum DC current gain of 1000, this transistor offers exceptional value and reliability. Trust STMicroelectronics to deliver top-notch products that meet your power management needs. Choose the TIP122FP for superior performance and efficiency in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ensuring it can withstand various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good efficiency and performance.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and allows for efficient switching operations. The built-in diode and resistor add convenience and functionality to the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast switching speeds and low power dissipation.

Package Shape: RECTANGULAR

The rectangular package shape offers easy mounting and installation, making the transistor suitable for various electronic circuits.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle high power loads without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 1000

A high minimum DC current gain of 1000 indicates that this transistor provides consistent and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can function effectively in a wide range of temperature environments.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage rating of 100V allows this transistor to withstand high voltage applications without breakdown.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a preferred choice for various electronic applications.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle high current loads, making it suitable for power electronic applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and ensures reliable electrical connections in the circuit.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection of the transistor in the circuit, reducing complexity and potential errors.

Case Connection: ISOLATED

The isolated case connection helps prevent electrical interference and improves the overall reliability and performance of the transistor in the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP122FP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TIP122FP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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