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STT13005D

STMicroelectronics

STT13005D by STMicroelectronics

STT13005D from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 45W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,493 parts In-Stock

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3,493

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ACDS - Activité Composants Distribution Service

France . 1,850 parts In-Stock

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1,850

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Anansix

USA . 1,657 parts In-Stock

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1,657

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Digiode

USA . 170 parts In-Stock

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170

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Distributors (Availability)

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Benley Electronics

USA . 2 parts In-Stock

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$1.750

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2

$1.750

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IDEA Electronic Components Group

UK . 1,598 parts In-Stock

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$1.814

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$1.633

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1,598

$1.814

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$1.633

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MKK Technologies

India . 2,317 parts In-Stock

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$3.412

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2,317

$3.412

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DigiPath Technology Company

USA . 2,317 parts In-Stock

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$3.412

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2,317

$3.412

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AZTECH Wire

Italy . 888 parts In-Stock

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$17.870

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888

$17.870

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Perfect Parts

USA . 4,144 parts In-Stock

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4,144

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Corphita

USA . 3,814 parts In-Stock

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3,814

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Alle Elektronik GmbH

Germany . 3,679 parts In-Stock

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3,679

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Parana Technologies

USA . 2,068 parts In-Stock

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$2.169

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2,068

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$2.169

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Cyclops Electronics Ltd (Excess)

UK . 1,850 parts In-Stock

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1,850

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Kepictronics

USA . 785 parts In-Stock

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785

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Overview

Unlock superior performance with the STT13005D from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This reliable NPN power BJT is designed for efficient switching applications, ensuring robust operation even in demanding conditions. With its built-in diode and high power dissipation capabilities, it delivers exceptional value and durability. Elevate your projects with a component that combines quality and versatility, making it the ideal choice for your electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and insulation, making it suitable for a variety of environments.

Polarity or Channel Type: NPN

As an NPN transistor, it is ideal for switching applications, enabling efficient performance in various circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the versatility of the device, allowing for better protection and circuit integration.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can operate efficiently in rapidly changing conditions.

Package Shape: RECTANGULAR

The rectangular shape improves space efficiency on PCB designs, facilitating compact circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and easy soldering for robust connections.

No. of Terminals: 3

With three terminals, it offers a simple interface for connection and integration into various electronic configurations.

Maximum Power Dissipation (Abs): 45 W

High power dissipation capability ensures that the transistor can handle demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mounting provides stable installation and ease of use in larger assemblies or enclosures.

Minimum DC Current Gain (hFE): 8

A minimum hFE of 8 ensures adequate amplification for various amplification tasks, enhancing circuit performance.

Maximum Operating Temperature: 150 °C

With a high operating temperature threshold, it can function reliably in extreme conditions, extending its application range.

Maximum Collector-Emitter Voltage: 400 V

A high maximum voltage rating allows for use in high-voltage applications, enhancing its versatility and reliability.

Transistor Element Material: SILICON

Silicon is a standard choice for semiconductors, providing excellent performance and thermal stability.

Maximum Collector Current (IC): 2 A

The ability to handle up to 2 A allows this transistor to manage significant loads in various applications.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and provides resistance against corrosion, ensuring long-term reliability.

Terminal Position: SINGLE

A single terminal position simplifies design and layout, making integration into circuits straightforward.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STT13005D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STT13005D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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