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STT13005D-K

STMicroelectronics

STT13005D-K by STMicroelectronics

STT13005D-K by STMicroelectronics is a NPN BJT with 400V VCE, 2A IC, and 45W Ptot. Ideal for switching applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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J2 Sourcing AB

Sweden . 19,500 parts In-Stock

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19,500

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Digiode

USA . 4,694 parts In-Stock

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4,694

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Anansix

USA . 2,894 parts In-Stock

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2,894

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Vyrian

USA . 2,538 parts In-Stock

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2,538

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 589 parts In-Stock

1+ parts

$0.488

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-

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$0.439

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589

$0.488

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$0.439

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MKK Technologies

India . 981 parts In-Stock

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$0.917

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981

$0.917

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DigiPath Technology Company

USA . 981 parts In-Stock

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$0.917

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981

$0.917

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AZTECH Wire

Italy . 502 parts In-Stock

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$9.720

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502

$9.720

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Ampacity Inc.

Singapore . 161 parts In-Stock

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$58.050

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161

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Kepictronics

USA . 184,000 parts In-Stock

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184,000

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Infinite Electronics LLP (Excess)

. 19,508 parts In-Stock

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Perfect Parts

USA . 6,852 parts In-Stock

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6,852

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Alle Elektronik GmbH

Germany . 3,771 parts In-Stock

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3,771

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Corphita

USA . 1,731 parts In-Stock

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1,731

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Parana Technologies

USA . 1,365 parts In-Stock

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$0.583

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1,365

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$0.583

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Overview

Experience the cutting-edge technology of the STT13005D-K by STMicroelectronics, a leading manufacturer renowned for its high-quality components. This power bipolar junction transistor (BJT) offers unmatched performance in switching applications, with a maximum collector-emitter voltage of 400V and a maximum collector current of 2A. Its single configuration with built-in diode ensures reliable operation, while the flange mount package style provides easy installation. Trust in STMicroelectronics to deliver superior products like the STT13005D-K that provide exceptional value and benefits to customers across various industries.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, making this product versatile and compatible with a wide range of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and can improve efficiency by reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast switching speeds and low power dissipation.

Maximum Power Dissipation (Abs): 45 W

With a high maximum power dissipation, this transistor can handle higher power loads without overheating, ensuring reliable operation.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and integration into various electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals are sturdy and reliable, making it easier to solder the transistor onto a circuit board.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and allows for easy integration into circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 400 V

High maximum collector-emitter voltage rating allows the transistor to handle higher voltages, making it suitable for a variety of applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, making this transistor a good choice for various electronic applications.

Maximum Collector Current (IC): 2 A

With a high maximum collector current rating, this transistor can handle larger currents, making it suitable for powering a variety of components.

Terminal Finish: MATTE TIN

Matte tin finish provides a reliable connection and helps prevent corrosion, ensuring stable performance over time.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and ensures proper alignment in the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STT13005D-K attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STT13005D-K Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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