Loading...

STT13005

STMicroelectronics

STT13005 by STMicroelectronics

STT13005 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 45W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,133 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,133

-

-

-

-

Digiode

USA . 3,269 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,269

-

-

-

-

Anansix

USA . 1,617 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,617

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 822 parts In-Stock

1+ parts

$1.117

100+ parts

-

1k+ parts

$1.005

10k+ parts

-

822

$1.117

-

$1.005

-

MKK Technologies

India . 1,854 parts In-Stock

1+ parts

$2.100

100+ parts

-

1k+ parts

-

10k+ parts

-

1,854

$2.100

-

-

-

DigiPath Technology Company

USA . 1,854 parts In-Stock

1+ parts

$2.100

100+ parts

-

1k+ parts

-

10k+ parts

-

1,854

$2.100

-

-

-

AZTECH Wire

Italy . 611 parts In-Stock

1+ parts

$16.670

100+ parts

-

1k+ parts

-

10k+ parts

-

611

$16.670

-

-

-

Perfect Parts

USA . 5,985 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,985

-

-

-

-

Alle Elektronik GmbH

Germany . 4,237 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,237

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Kepictronics

USA . 1,648 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,648

-

-

-

-

Parana Technologies

USA . 969 parts In-Stock

1+ parts

-

100+ parts

$1.335

1k+ parts

-

10k+ parts

-

969

-

$1.335

-

-

Corphita

USA . 619 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

619

-

-

-

-

Overview

Unlock the power of efficiency with the STT13005 from STMicroelectronics! Renowned for its quality and reliability, this NPN BJT is engineered for seamless switching applications, making it an ideal choice for diverse electronic projects. With a robust design capable of handling up to 700V and a max temperature of 150 °C, it ensures durability and performance. Elevate your designs with a trusted partner that delivers exceptional value and dependable results!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection from environmental factors, ensuring reliable performance.

Polarity or Channel Type: NPN

The NPN configuration is widely used in electronic circuits for switching and amplification, making it versatile for various applications.

Configuration: SINGLE

A single configuration simplifies the design and integration of the transistor into circuits, reducing complexity.

Transistor Application: SWITCHING

Specifically designed for switching applications, this BJT ensures efficient operation in control circuits and power management.

Package Shape: RECTANGULAR

The rectangular package shape allows for easier mounting and integration on PCBs, enhancing design flexibility.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical stability and make the transistor suitable for prototyping and permanent installations.

No. of Terminals: 3

Having three terminals allows for straightforward connections while ensuring effective operation in various circuit designs.

Maximum Power Dissipation (Abs): 45 W

A high power dissipation capability allows for the safe handling of significant power levels, improving reliability in demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides secure attachment options, which is ideal for stable installation in electronic devices.

Minimum DC Current Gain (hFE): 8

A minimum gain of 8 ensures adequate amplification for various electronic applications, boosting circuit performance.

Maximum Operating Temperature: 150 °C

A high operating temperature rating makes this BJT suitable for use in harsh environments, ensuring longevity and reliability.

Maximum Collector-Emitter Voltage: 700 V

With a high maximum collector-emitter voltage, this transistor is capable of handling high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon is a well-known semiconductor material that provides excellent conductivity, reliability, and efficiency in electronic applications.

Maximum Collector Current (IC): 2 A

The ability to handle up to 2 A of collector current improves its usability in power-intensive applications, making it a robust choice.

Terminal Position: SINGLE

A single terminal position simplifies integration and usage in applications, reducing setup time and complexity.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STT13005 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

700 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STT13005 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4