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STT13005FP

STMicroelectronics

STT13005FP by STMicroelectronics

STT13005FP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 30W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.

Median Price

$1.350

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,417 parts In-Stock

1+ parts

$1.350

100+ parts

$0.565

1k+ parts

$0.401

10k+ parts

$0.367

2,417

$1.350

$0.565

$0.401

$0.367

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 650 parts In-Stock

1+ parts

$1.282

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$1.282

-

-

-

Vyrian

USA . 2,940 parts In-Stock

1+ parts

$1.350

100+ parts

-

1k+ parts

-

10k+ parts

-

2,940

$1.350

-

-

-

Anansix

USA . 2,153 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,153

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 425 parts In-Stock

1+ parts

$1.093

100+ parts

-

1k+ parts

$0.984

10k+ parts

-

425

$1.093

-

$0.984

-

Corphita

USA . 2,553 parts In-Stock

1+ parts

$1.215

100+ parts

-

1k+ parts

-

10k+ parts

-

2,553

$1.215

-

-

-

MKK Technologies

India . 1,497 parts In-Stock

1+ parts

$2.055

100+ parts

-

1k+ parts

-

10k+ parts

-

1,497

$2.055

-

-

-

DigiPath Technology Company

USA . 1,497 parts In-Stock

1+ parts

$2.055

100+ parts

-

1k+ parts

-

10k+ parts

-

1,497

$2.055

-

-

-

Microchip USA

USA . 2,994 parts In-Stock

1+ parts

$5.980

100+ parts

-

1k+ parts

-

10k+ parts

-

2,994

$5.980

-

-

-

Component Stockers USA

USA . 267 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

267

$99.990

-

-

-

Alle Elektronik GmbH

Germany . 2,420 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,420

-

-

-

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Parana Technologies

USA . 2,189 parts In-Stock

1+ parts

-

100+ parts

$1.307

1k+ parts

-

10k+ parts

-

2,189

-

$1.307

-

-

Overview

Unlock the power of reliable switching with STMicroelectronics' STT13005FP, an NPN bipolar junction transistor designed for efficiency and performance. Known for their commitment to quality, STMicroelectronics ensures that this robust component delivers exceptional reliability in diverse applications, from automotive to industrial systems. With a maximum power dissipation of 30 W and superior thermal management, elevate your projects while enjoying the peace of mind that comes with industry-leading innovation and support.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials enhances durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration is versatile for switching applications, allowing for better control and high-speed performance.

Configuration: SINGLE

A single configuration simplifies the circuit design while providing essential functionality in electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can effectively control electrical signals, ideal for power management.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on PCBs and aids in easy mounting.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections and are beneficial for high-power applications.

No. of Terminals: 3

Having three terminals allows for easy integration in various circuit designs, ensuring simple connections.

Maximum Power Dissipation (Abs): 30 W

A high maximum power dissipation capability means this device can handle significant loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mounting offers enhanced stability and ease of installation, making it suitable for robust applications.

Minimum DC Current Gain (hFE): 8

A minimum current gain of 8 ensures effective amplification of signals, suitable for applications requiring signal boosting.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this transistor is reliable in extreme environments, ensuring longevity and performance.

Maximum Collector-Emitter Voltage: 400 V

A high voltage rating makes this transistor suitable for applications requiring strict voltage regulation.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties, making it a standard for reliable and efficient performance.

Maximum Collector Current (IC): 2 A

Capable of handling up to 2 A of collector current, this transistor is a strong choice for various power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections over time.

Terminal Position: SINGLE

Single terminal position eases circuit design complexity while maintaining effective functionality.

Case Connection: ISOLATED

An isolated case connection reduces the risk of short-circuiting, enhancing safety and reliability in applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STT13005FP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STT13005FP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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