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BULB742C-1

STMicroelectronics

BULB742C-1 by STMicroelectronics

BULB742C-1 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 70W, a collector-emitter voltage of 400V, and operates up to 150 °C. This versatile transistor is ideal for various electronic circuits.

Median Price

$1.880

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,000 parts In-Stock

1+ parts

$1.880

100+ parts

$0.906

1k+ parts

$0.687

10k+ parts

-

1,000

$1.880

$0.906

$0.687

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,690 parts In-Stock

1+ parts

$1.786

100+ parts

-

1k+ parts

-

10k+ parts

-

4,690

$1.786

-

-

-

Vyrian

USA . 4,149 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,149

-

-

-

-

Anansix

USA . 1,697 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,697

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 839 parts In-Stock

1+ parts

$1.142

100+ parts

-

1k+ parts

$1.028

10k+ parts

-

839

$1.142

-

$1.028

-

Corphita

USA . 3,715 parts In-Stock

1+ parts

$1.692

100+ parts

-

1k+ parts

-

10k+ parts

-

3,715

$1.692

-

-

-

MKK Technologies

India . 2,119 parts In-Stock

1+ parts

$2.147

100+ parts

-

1k+ parts

-

10k+ parts

-

2,119

$2.147

-

-

-

DigiPath Technology Company

USA . 2,119 parts In-Stock

1+ parts

$2.147

100+ parts

-

1k+ parts

-

10k+ parts

-

2,119

$2.147

-

-

-

Microchip USA

USA . 394 parts In-Stock

1+ parts

$9.880

100+ parts

-

1k+ parts

-

10k+ parts

-

394

$9.880

-

-

-

Parana Technologies

USA . 2,151 parts In-Stock

1+ parts

-

100+ parts

$1.365

1k+ parts

-

10k+ parts

-

2,151

-

$1.365

-

-

Perfect Parts

USA . 1,120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,120

-

-

-

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Alle Elektronik GmbH

Germany . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,000

-

-

-

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Northwest PG Solutions

USA . 474 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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474

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-

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Native Components

USA . 124 parts In-Stock

1+ parts

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100+ parts

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124

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Overview

Unlock unparalleled performance and reliability with the BULB742C-1 from STMicroelectronics, a leader in semiconductor innovation. This high-quality NPN transistor excels in switching applications, offering remarkable power handling up to 70 W and robust operating temperatures. With its durable plastic/epoxy construction and easy through-hole installation, it ensures long-lasting efficiency for your electronic designs. Trust STMicroelectronics for superior quality and experience the benefits of advanced technology in every project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and protection against environmental elements, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are ideal for switching and amplification applications, commonly used in digital circuits, making this product versatile.

Configuration: SINGLE

A single configuration simplifies integration into circuits, providing ease of use without complexity in design.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor supports efficient power control and management in electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape is convenient for design and mounting, allowing easier placement on PCBs.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides robust connections, ensuring reliability in high-stress environments.

No. of Terminals: 3

Having three terminals allows for straightforward connectivity and integration in circuit designs.

Maximum Power Dissipation (Abs): 70 W

With a maximum power dissipation of 70 W, this transistor is capable of handling significant power loads, suitable for high-performance applications.

Package Style (Meter): IN-LINE

The in-line package style enhances space efficiency on printed circuit boards, making it an excellent choice for compact designs.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 makes this transistor reliable for amplification tasks, ensuring good performance in low current applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can operate effectively in high-temperature environments, enhancing its reliability.

Maximum Collector-Emitter Voltage: 400 V

The ability to handle a maximum collector-emitter voltage of 400 V makes this transistor suitable for high-voltage applications.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical properties, ensuring efficient performance and durability.

Maximum Collector Current (IC): 4 A

Capable of handling up to 4 A of collector current, this transistor can manage significant loads, essential for many power applications.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish enhances solderability and reduces oxidation, ensuring reliable electrical connections.

Terminal Position: SINGLE

A single terminal position allows for straightforward mounting and integration into various circuit configurations.

Case Connection: COLLECTOR

Having the collector as the case connection simplifies circuit designs and makes the transistor easier to incorporate into various layouts.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULB742C-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULB742C-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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