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BULB49D-1

STMicroelectronics

BULB49D-1 by STMicroelectronics

BULB49D-1 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages up to 450V. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,469 parts In-Stock

1+ parts

-

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2,469

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Digiode

USA . 1,209 parts In-Stock

1+ parts

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1k+ parts

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1,209

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Vyrian

USA . 210 parts In-Stock

1+ parts

-

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210

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 470 parts In-Stock

1+ parts

$0.788

100+ parts

-

1k+ parts

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10k+ parts

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470

$0.788

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IDEA Electronic Components Group

UK . 423 parts In-Stock

1+ parts

$0.949

100+ parts

-

1k+ parts

$0.854

10k+ parts

-

423

$0.949

-

$0.854

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Native Components

USA . 865 parts In-Stock

1+ parts

$1.760

100+ parts

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865

$1.760

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MKK Technologies

India . 2,289 parts In-Stock

1+ parts

$1.785

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2,289

$1.785

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DigiPath Technology Company

USA . 2,289 parts In-Stock

1+ parts

$1.785

100+ parts

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2,289

$1.785

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Northwest PG Solutions

USA . 683 parts In-Stock

1+ parts

$1.936

100+ parts

-

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683

$1.936

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Corphita

USA . 2,030 parts In-Stock

1+ parts

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2,030

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Parana Technologies

USA . 654 parts In-Stock

1+ parts

-

100+ parts

$1.135

1k+ parts

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654

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$1.135

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Overview

Unlock powerful performance with the BULB49D-1 from STMicroelectronics, a leader in semiconductor innovation. This robust NPN power BJT is designed for seamless switching applications, offering exceptional reliability and efficiency. With its durable plastic/epoxy package and high operating temperature resilience, it thrives in demanding environments, ensuring longevity and optimal performance. Elevate your projects with a trusted component that delivers unmatched value and quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

The NPN configuration is widely utilized in multiple electronic circuits, offering versatile performance in amplification and switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances reliability and simplifies design by providing protection and enabling easy integration into circuits.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can efficiently manage power transitions, making it ideal for power control in various electronic devices.

Package Shape: RECTANGULAR

The rectangular shape is space-efficient, allowing for easy integration into printed circuit boards (PCBs) and contributing to compact design.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure strong and reliable connections to the circuit board, providing mechanical stability during operation.

No. of Terminals: 3

A three-terminal design simplifies connections and makes circuit design more straightforward, enhancing usability in various applications.

Maximum Power Dissipation (Abs): 80 W

With a maximum power dissipation of 80 W, this transistor can handle substantial power levels, suitable for high-power applications.

Package Style (Meter): IN-LINE

The in-line package style maximizes space efficiency, facilitating easier placement and assembly in automated manufacturing processes.

Minimum DC Current Gain (hFE): 4

A minimum gain of 4 indicates good amplification capabilities, making it suitable for applications requiring signal boosting.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance in demanding environments, contributing to overall durability.

Maximum Collector-Emitter Voltage: 450 V

With a high maximum collector-emitter voltage, this transistor can be effectively used in high-voltage applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material, contributing to stable and efficient operation in a variety of electronic applications.

Maximum Collector Current (IC): 5 A

The capability to handle up to 5 A of collector current allows for extensive use in power management and control applications.

Terminal Finish: Matte Tin (Sn)

Matte Tin finish enhances solderability and provides corrosion resistance, ensuring longer lifespan and reliability of connections.

Terminal Position: SINGLE

A single terminal position simplifies the layout and design of the circuit, making it easier to integrate into systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULB49D-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULB49D-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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