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BULB49DT4

STMicroelectronics

BULB49DT4 by STMicroelectronics

BULB49DT4 by STMicroelectronics is an NPN power BJT designed for efficient switching applications. It features a max collector-emitter voltage of 450V, 80W power dissipation, and operates up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freddi Giovanni

Italy . 19,000 parts In-Stock

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19,000

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Vyrian

USA . 8,840 parts In-Stock

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8,840

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ComSIT Distribution GmbH

Germany . 7,000 parts In-Stock

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7,000

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A&K Electronics

USA . 5,000 parts In-Stock

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5,000

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Rotakorn

Sweden . 5,000 parts In-Stock

1+ parts

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5,000

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Bristol Electronics

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Digiode

USA . 3,248 parts In-Stock

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3,248

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Anansix

USA . 1,304 parts In-Stock

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1,304

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Distributors (Availability)

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Corohmni

South Africa . 50 parts In-Stock

1+ parts

$0.350

100+ parts

-

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50

$0.350

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.828

100+ parts

$0.753

1k+ parts

$0.679

10k+ parts

-

600

$0.828

$0.753

$0.679

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IDEA Electronic Components Group

UK . 1,155 parts In-Stock

1+ parts

$0.922

100+ parts

-

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$0.830

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1,155

$0.922

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$0.830

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MKK Technologies

India . 1,281 parts In-Stock

1+ parts

$1.733

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1,281

$1.733

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DigiPath Technology Company

USA . 1,281 parts In-Stock

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$1.733

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1,281

$1.733

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AZTECH Wire

Italy . 288 parts In-Stock

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$9.520

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288

$9.520

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Perfect Parts

USA . 23,520 parts In-Stock

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23,520

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Alle Elektronik GmbH

Germany . 4,518 parts In-Stock

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4,518

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Corphita

USA . 2,647 parts In-Stock

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2,647

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Northwest PG Solutions

USA . 2,108 parts In-Stock

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2,108

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Native Components

USA . 138 parts In-Stock

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138

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Parana Technologies

USA . 11 parts In-Stock

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$1.102

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11

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$1.102

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Overview

Unleash the power of innovation with the BULB49DT4 from STMicroelectronics, a trusted leader in semiconductor solutions. This high-performance NPN transistor is designed for seamless switching applications, ensuring reliability in even the most demanding environments. Its compact surface mount design enhances space efficiency while delivering outstanding power dissipation and thermal performance. Choose BULB49DT4 to elevate your projects with superior quality and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials provides durability and protects the transistor from environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are popular for applications needing high speed and reliability, making this product ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the functionality of the transistor, providing additional protection and simplifying circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient operation in digital or power switching circuits.

Surface Mount: YES

Being a surface mount device (SMD) allows for easy integration into modern circuit designs, saving space and reducing assembly costs.

Package Shape: RECTANGULAR

The rectangular package shape aids in efficient layout in printed circuit boards (PCBs), optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide excellent solder joint reliability and ease of handling during automated assembly.

No. of Terminals: 2

A simple two-terminal configuration makes it easy to integrate and minimizes the complexity of the circuit design.

Maximum Power Dissipation (Abs): 80 W

With a high power dissipation rating, this transistor can handle substantial loads, ensuring reliable operation in demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps in saving board space while allowing for efficient heat management.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 ensures sufficient amplification for reliable switching operations in circuits.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature enables the transistor to function reliably in high-temperature environments.

Maximum Collector-Emitter Voltage: 450 V

With a high collector-emitter voltage rating, this transistor can be used in high-voltage applications, expanding its versatility.

Transistor Element Material: SILICON

Silicon as the material provides good thermal stability and efficiency, making it a preferred choice for robust electronic devices.

Maximum Collector Current (IC): 5 A

A maximum collector current rating of 5 A allows for handling significant current loads, suitable for various power applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish improves solderability and enhances the durability of the connections, reducing the risk of oxidation.

Terminal Position: SINGLE

A single terminal position simplifies assembly and facilitates ease of handling during manufacturing.

Maximum Time At Peak Reflow Temperature: 30 s

A peak reflow time of up to 30 seconds provides sufficient thermal exposure for reliable solder joints during assembly.

Peak Reflow Temperature: 245 °C

With a peak reflow temperature of 245 °C, this transistor can withstand high temperatures during soldering processes without damage.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULB49DT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULB49DT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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