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BULB7216T4

STMicroelectronics

BULB7216T4 by STMicroelectronics

BULB7216T4 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for compact electronic designs with surface mount capabilities.

Median Price

$0.693

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 46 parts In-Stock

1+ parts

$0.693

100+ parts

$0.693

1k+ parts

$0.693

10k+ parts

$0.530

46

$0.693

$0.693

$0.693

$0.530

Chip1Stop

Japan . 46 parts In-Stock

1+ parts

$1.020

100+ parts

-

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46

$1.020

-

-

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Verical

USA . 46 parts In-Stock

1+ parts

-

100+ parts

$0.693

1k+ parts

$0.693

10k+ parts

$0.530

46

-

$0.693

$0.693

$0.530

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,227 parts In-Stock

1+ parts

$0.658

100+ parts

-

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2,227

$0.658

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Vyrian

USA . 11,991 parts In-Stock

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11,991

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Bristol Electronics

USA . 479 parts In-Stock

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479

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Flex Direct, LLC

USA . 479 parts In-Stock

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479

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Anansix

USA . 148 parts In-Stock

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148

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,945 parts In-Stock

1+ parts

$0.459

100+ parts

-

1k+ parts

$0.413

10k+ parts

-

1,945

$0.459

-

$0.413

-

Component Stockers USA

USA . 276 parts In-Stock

1+ parts

$0.580

100+ parts

$0.580

1k+ parts

-

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276

$0.580

$0.580

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Corphita

USA . 1,620 parts In-Stock

1+ parts

$0.624

100+ parts

-

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1,620

$0.624

-

-

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MKK Technologies

India . 59 parts In-Stock

1+ parts

$0.863

100+ parts

-

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59

$0.863

-

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DigiPath Technology Company

USA . 59 parts In-Stock

1+ parts

$0.863

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59

$0.863

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Corohmni

South Africa . 29 parts In-Stock

1+ parts

$1.541

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29

$1.541

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Advanced Electronics

New Zealand . 870 parts In-Stock

1+ parts

$1.743

100+ parts

$1.586

1k+ parts

$1.429

10k+ parts

-

870

$1.743

$1.586

$1.429

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AZTECH Wire

Italy . 121 parts In-Stock

1+ parts

$15.070

100+ parts

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121

$15.070

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 24,706 parts In-Stock

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24,706

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Alle Elektronik GmbH

Germany . 4,222 parts In-Stock

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4,222

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Parana Technologies

USA . 2,192 parts In-Stock

1+ parts

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$0.549

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2,192

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$0.549

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Perfect Parts

USA . 2,089 parts In-Stock

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2,089

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Northwest PG Solutions

USA . 1,448 parts In-Stock

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1,448

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Native Components

USA . 47 parts In-Stock

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47

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Overview

Elevate your projects with the BULB7216T4 from STMicroelectronics, a powerhouse in the world of electronics. This high-performance NPN transistor is designed for seamless switching applications, ensuring reliability and efficiency in every use. With robust power handling capabilities and superior thermal management, it excels in demanding environments. Trust in STMicroelectronics' legacy of quality and innovation to deliver unmatched value that enhances your designs and drives success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent durability and thermal stability, making this transistor suitable for various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it is ideal for switching and amplification applications, allowing for efficient control of current flow.

Configuration: SINGLE

Designed in a single configuration, this transistor is easy to integrate into designs, offering space-saving advantages.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can effectively manage power control, making it a great choice for circuits that require rapid switching.

Surface Mount: YES

The surface mount design allows for automated assembly, reducing production costs and improving manufacturing efficiency.

Package Shape: RECTANGULAR

Rectangular packaging facilitates easy layout on PCBs, enhancing space utilization and overall circuit design flexibility.

Terminal Form: GULL WING

Gull wing terminals provide efficient solderability and mechanical stability, ensuring reliable electrical connections in assembled devices.

No. of Terminals: 2

The two-terminal design simplifies connections and reduces the footprint on printed circuit boards, making it user-friendly.

Maximum Power Dissipation (Abs): 80 W

An 80 W maximum power dissipation ensures the transistor can handle high-power applications without overheating, suitable for demanding environments.

Package Style (Meter): SMALL OUTLINE

The small outline package allows for compact designs, making it ideal for devices where space is at a premium.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 ensures adequate amplification for various applications, providing reliable performance in signal processing.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor is suitable for high-temperature applications, ensuring durability in challenging environments.

Maximum Collector-Emitter Voltage: 700 V

The ability to handle up to 700 V creates opportunities for high voltage applications, making it versatile for different circuit designs.

Transistor Element Material: SILICON

Silicon material enhances the reliability and performance of the transistor, which is a standard choice for efficient electronic components.

Maximum Collector Current (IC): 3 A

A maximum collector current rating of 3 A provides flexibility in various applications, allowing for robust power management.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and prevents corrosion, ensuring long-term reliability in circuit applications.

Terminal Position: SINGLE

Single terminal positioning simplifies the design and layout process within electrical components and PCBs.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum exposure of 30 seconds to peak reflow temperature ensures the integrity of the transistor during assembly processes, minimizing thermal stress.

Peak Reflow Temperature: 245 °C

A peak reflow temperature of 245 °C is suitable for high-temperature soldering processes, ensuring compatibility with modern manufacturing techniques.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULB7216T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

700 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULB7216T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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