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BULB128D-BT4

STMicroelectronics

BULB128D-BT4 by STMicroelectronics

BULB128D-BT4 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for compact electronic designs with surface mount capabilities.

Median Price

$2.038

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Lakeland Logistics Inc

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,000

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-

-

-

Bristol Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$2.038

1k+ parts

$1.791

10k+ parts

-

3,000

-

$2.038

$1.791

-

Digiode

USA . 1,591 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,591

-

-

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Anansix

USA . 1,156 parts In-Stock

1+ parts

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1,156

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Vyrian

USA . 203 parts In-Stock

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203

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 123 parts In-Stock

1+ parts

$0.222

100+ parts

-

1k+ parts

-

10k+ parts

$0.213

123

$0.222

-

-

$0.213

Northwest PG Solutions

USA . 317 parts In-Stock

1+ parts

$0.244

100+ parts

-

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-

10k+ parts

$0.215

317

$0.244

-

-

$0.215

IDEA Electronic Components Group

UK . 1,817 parts In-Stock

1+ parts

$0.727

100+ parts

-

1k+ parts

$0.654

10k+ parts

-

1,817

$0.727

-

$0.654

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MKK Technologies

India . 2,176 parts In-Stock

1+ parts

$1.367

100+ parts

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2,176

$1.367

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DigiPath Technology Company

USA . 2,176 parts In-Stock

1+ parts

$1.367

100+ parts

-

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10k+ parts

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2,176

$1.367

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

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100+ parts

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2,500

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-

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Parana Technologies

USA . 1,954 parts In-Stock

1+ parts

-

100+ parts

$0.869

1k+ parts

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1,954

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$0.869

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Corphita

USA . 761 parts In-Stock

1+ parts

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761

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Overview

Elevate your power management solutions with the BULB128D-BT4 from STMicroelectronics. Renowned for its exceptional quality and innovative engineering, STMicroelectronics delivers a robust NPN transistor that excels in switching applications. With its compact design and high efficiency, this versatile device ensures maximum performance while maintaining reliability under demanding conditions. Customers benefit from superior thermal stability and durability, making it an ideal choice for various electronic projects and industrial applications. Empower your designs with unmatched value and performance today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Using plastic/epoxy materials ensures durability and resistance to environmental factors, making the transistor reliable in various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, providing versatile options for circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode facilitates easy interfacing and protection against reverse polarity, simplifying circuit design.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can handle high-speed operations suitable for power control in circuits.

Surface Mount: YES

Surface mount capability allows for compact designs and automated assembly processes, improving manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape provides efficient space utilization on printed circuit boards (PCBs), making it suitable for high-density applications.

Terminal Form: GULL WING

Gull wing terminals enhance solderability and mechanical stability, leading to reliable PCB connections.

No. of Terminals: 2

A 2-terminal configuration simplifies connections in circuits while maintaining functionality, ideal for minimalistic designs.

Maximum Power Dissipation (Abs): 70 W

With a maximum power dissipation of 70 W, this transistor can effectively manage heat in high-power applications, enhancing reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style is designed for space-constrained designs, making it a good fit for compact electronics.

Minimum DC Current Gain (hFE): 12

A minimum current gain ensures adequate amplification, making this transistor suitable for a variety of signal processing tasks.

Maximum Operating Temperature: 150 C

A high maximum operating temperature allows the transistor to function reliably in extreme environments, enhancing its application range.

Maximum Collector-Emitter Voltage: 400 V

With a maximum collector-emitter voltage of 400 V, this transistor can handle high voltage conditions, suitable for industrial use.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its stability and efficiency, providing reliable performance.

Maximum Collector Current (IC): 4 A

A collector current rating of 4 A ensures this transistor can drive substantial loads, making it suitable for power electronic applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finishing ensures good solderability and corrosion resistance, enhancing the durability of the electrical connections.

Terminal Position: SINGLE

The single terminal position simplifies circuit layout for easy integration into various electronic designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULB128D-BT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

12

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULB128D-BT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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