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BULB742CT4

STMicroelectronics

BULB742CT4 by STMicroelectronics

BULB742CT4 by STMicroelectronics is a NPN Power BJT with 400V VCE, 4A IC, and 70W Ptot. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating up to 150 °C, it offers a min hFE of 25 and matte tin finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,852 parts In-Stock

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2,852

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Digiode

USA . 874 parts In-Stock

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874

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Vyrian

USA . 82 parts In-Stock

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82

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,861 parts In-Stock

1+ parts

$0.818

100+ parts

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1k+ parts

$0.736

10k+ parts

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1,861

$0.818

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$0.736

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MKK Technologies

India . 1,378 parts In-Stock

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$1.538

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1,378

$1.538

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DigiPath Technology Company

USA . 1,378 parts In-Stock

1+ parts

$1.538

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1,378

$1.538

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Corphita

USA . 3,761 parts In-Stock

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3,761

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Northwest PG Solutions

USA . 1,334 parts In-Stock

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1,334

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Native Components

USA . 865 parts In-Stock

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865

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Parana Technologies

USA . 433 parts In-Stock

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$0.978

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433

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$0.978

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Overview

Looking for a reliable and high-quality power bipolar junction transistor (BJT)? Look no further than the BULB742CT4 by STMicroelectronics! With a maximum power dissipation of 70W and a maximum collector-emitter voltage of 400V, this NPN transistor is perfect for switching applications. Its small outline package shape and gull wing terminal form make it ideal for surface mount installations. Trust in the expertise of STMicroelectronics to deliver a product that meets your needs for efficiency and performance. Upgrade your designs with the BULB742CT4 and experience the benefits of superior quality and reliability in your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ensuring longevity and ease of handling.

Polarity or Channel Type: NPN

NPN transistors are commonly used in many electronic applications due to their versatility and compatibility with a wide range of circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

The switching application allows for fast switching speeds, making it suitable for applications that require rapid on/off transitions.

Surface Mount: YES

Being surface-mount compatible saves space on the PCB and enables automated assembly processes, enhancing efficiency and reducing production costs.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized form factor, making it easy to integrate into various circuit designs and PCB layouts.

Terminal Form: GULL WING

The gull-wing terminal form facilitates easy soldering and ensures a reliable electrical connection, improving overall performance and durability.

Maximum Power Dissipation (Abs): 70 W

With a high maximum power dissipation, the transistor can handle heavy loads and operate efficiently in demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for high-density mounting, ideal for compact electronic devices and modules.

Minimum DC Current Gain (hFE): 25

Having a minimum DC current gain ensures stable amplification and reliable performance in various signal processing applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature provides thermal stability and reliability, allowing the transistor to operate in harsh environments without overheating.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating allows the transistor to handle high voltage levels, making it suitable for voltage switching applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, low leakage, and reliable operation, making them a popular choice for a wide range of electronic circuits.

Maximum Collector Current (IC): 4 A

With a high maximum collector current, the transistor can handle high current loads, making it suitable for power-switching applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability and performance.

Terminal Position: SINGLE

Having a single terminal position simplifies PCB layout and reduces the risk of wiring errors, enhancing overall reliability and ease of assembly.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and ensures proper heat dissipation, improving overall performance and reliability.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature minimizes the risk of thermal damage during soldering, ensuring the integrity of the transistor.

Peak Reflow Temperature °C: 245

The high peak reflow temperature allows for reliable and efficient soldering processes, ensuring secure and durable connections.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BULB742CT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BULB742CT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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