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ST1802FH

STMicroelectronics

ST1802FH by STMicroelectronics

ST1802FH by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 3,402 parts In-Stock

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3,402

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Digiode

USA . 2,053 parts In-Stock

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2,053

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Anansix

USA . 1,318 parts In-Stock

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1,318

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Electronics Depot

USA . 499 parts In-Stock

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499

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IDEA Electronic Components Group

UK . 908 parts In-Stock

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$0.739

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$0.665

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908

$0.739

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$0.665

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MKK Technologies

India . 883 parts In-Stock

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$1.389

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883

$1.389

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DigiPath Technology Company

USA . 883 parts In-Stock

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$1.389

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883

$1.389

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AZTECH Wire

Italy . 403 parts In-Stock

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$9.980

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403

$9.980

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Component Stockers USA

USA . 436 parts In-Stock

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$99.990

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436

$99.990

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Alle Elektronik GmbH

Germany . 1,637 parts In-Stock

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1,637

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Corphita

USA . 556 parts In-Stock

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Parana Technologies

USA . 423 parts In-Stock

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$0.883

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423

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$0.883

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Infinite Electronics LLP (Excess)

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Overview

Unlock unmatched performance with the ST1802FH from STMicroelectronics, a leader in innovative semiconductor solutions. This robust NPN power transistor excels in switching applications, offering exceptional reliability and efficiency for your electronic designs. With its durable plastic/epoxy package and impressive voltage handling, the ST1802FH delivers value that enhances your projects, empowering you to push boundaries while ensuring quality and longevity in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy construction ensures durability and protection against environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

As an NPN transistor, this product is ideal for switching applications, offering efficient electron flow and strong performance in amplification.

Configuration: SINGLE

The single configuration provides a simple and efficient design, making integration into circuits straightforward.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable and rapid on/off control, enhancing circuit performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration in various circuit layouts.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures a secure and stable connection, beneficial for robust applications.

No. of Terminals: 3

With three terminals, this BJT offers simplicity in circuit connections while maintaining its functional capabilities.

Maximum Power Dissipation (Abs): 40 W

The ability to dissipate up to 40 W of power means this transistor can handle demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides a reliable mounting option, making installation easier and ensuring stability during operation.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 ensures effective amplification, making this transistor suitable for a variety of circuit designs.

Maximum Operating Temperature: 150 °C

Operating at up to 150 °C allows this transistor to function effectively in high-temperature environments.

Maximum Collector-Emitter Voltage: 600 V

With a maximum voltage rating of 600 V, this transistor is capable of functioning in high-voltage applications, adding to its versatility.

Transistor Element Material: SILICON

The use of silicon as the element material provides excellent thermal conductivity and performance stability.

Maximum Collector Current (IC): 10 A

Able to handle a collector current of up to 10 A, this transistor is capable of managing significant power loads.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and oxidation resistance, ensuring reliable electrical connections.

Terminal Position: SINGLE

A single terminal position simplifies the connection and alignment process in various applications.

Case Connection: ISOLATED

Isolated case connection minimizes the risk of short circuits, enhancing the safety and reliability of the circuit design.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST1802FH attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Minimum DC Current Gain (hFE):

4

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST1802FH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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