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ST1803DHI

STMicroelectronics

ST1803DHI by STMicroelectronics

ST1803DHI by STMicroelectronics is a NPN BJT transistor with 600V VCE, 10A IC, and 50W Ptot. It's used for switching applications due to its built-in diode and resistor in a plastic package with isolated case connection.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 2,220 parts In-Stock

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2,220

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Vyrian

USA . 2,095 parts In-Stock

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2,095

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Digiode

USA . 839 parts In-Stock

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839

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Anansix

USA . 570 parts In-Stock

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570

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Elcom Components

USA . 90 parts In-Stock

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90

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LIBRA Elektronik GmbH

Germany . 30 parts In-Stock

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30

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GES GmbH

Germany . 10 parts In-Stock

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10

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 695 parts In-Stock

1+ parts

$0.351

100+ parts

-

1k+ parts

$0.315

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695

$0.351

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$0.315

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MKK Technologies

India . 1,509 parts In-Stock

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$0.659

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1,509

$0.659

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DigiPath Technology Company

USA . 1,509 parts In-Stock

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$0.659

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1,509

$0.659

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Advanced Electronics

New Zealand . 151 parts In-Stock

1+ parts

$0.772

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$0.703

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$0.633

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151

$0.772

$0.703

$0.633

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A-Z Elektronik GmbH

Germany . 4,758 parts In-Stock

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4,758

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Corphita

USA . 1,605 parts In-Stock

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Parana Technologies

USA . 1,211 parts In-Stock

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$0.419

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1,211

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$0.419

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 564 parts In-Stock

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564

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Overview

Experience the exceptional quality and reliability of the ST1803DHI by STMicroelectronics, a leading manufacturer in the industry. This Power BJT transistor offers unparalleled performance in switching applications with its built-in diode and resistor configuration. With a maximum collector-emitter voltage of 600V and maximum power dissipation of 50W, this product ensures reliable operation even in demanding environments. Trust in STMicroelectronics to deliver cutting-edge technology and superior products that meet your needs. Unlock the potential of your projects with the ST1803DHI.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ensuring it can be easily integrated into various electronic devices without adding excessive weight.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for a wide range of electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor streamline the circuit design process, saving time and effort in integrating additional components for efficient switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable and fast switching performance, making it ideal for use in power control circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting onto circuit boards, providing a compact and space-saving solution for electronic designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form facilitates a secure and reliable connection to the circuit board, ensuring stable operation and ease of assembly during manufacturing.

Maximum Power Dissipation (Abs): 50 W

With a high maximum power dissipation, this transistor can handle significant power levels, making it suitable for demanding applications that require efficient heat dissipation.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a sturdy and secure mounting option, ensuring stability and reliability in high-vibration environments.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 indicates good amplification capabilities, allowing for effective signal amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance, ensuring reliable operation in various operating conditions.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage rating allows the transistor to handle high voltage levels, making it suitable for power control applications that require voltage switching.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice in electronic applications due to their excellent thermal stability and low leakage current.

Maximum Collector Current (IC): 10 A

With a high maximum collector current rating, this transistor can safely handle high currents, making it suitable for power switching applications that require efficient current control.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and reduces the risk of wiring errors, ensuring easy integration into electronic circuits.

Case Connection: ISOLATED

The isolated case connection enhances safety by providing electrical isolation between the transistor case and the circuit, reducing the risk of electrical interference or short circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST1803DHI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST1803DHI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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