Loading...

ST1802FX

STMicroelectronics

ST1802FX by STMicroelectronics

ST1802FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,468 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,468

-

-

-

-

Anansix

USA . 874 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

874

-

-

-

-

Digiode

USA . 711 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

711

-

-

-

-

LittleDiode

UK . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.487

100+ parts

$0.443

1k+ parts

$0.399

10k+ parts

-

350

$0.487

$0.443

$0.399

-

IDEA Electronic Components Group

UK . 2,349 parts In-Stock

1+ parts

$1.454

100+ parts

-

1k+ parts

$1.308

10k+ parts

-

2,349

$1.454

-

$1.308

-

MKK Technologies

India . 322 parts In-Stock

1+ parts

$2.733

100+ parts

-

1k+ parts

-

10k+ parts

-

322

$2.733

-

-

-

DigiPath Technology Company

USA . 322 parts In-Stock

1+ parts

$2.733

100+ parts

-

1k+ parts

-

10k+ parts

-

322

$2.733

-

-

-

AZTECH Wire

Italy . 1,171 parts In-Stock

1+ parts

$13.280

100+ parts

-

1k+ parts

-

10k+ parts

-

1,171

$13.280

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 12,304 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,304

-

-

-

-

Corphita

USA . 4,458 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,458

-

-

-

-

Alle Elektronik GmbH

Germany . 3,836 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,836

-

-

-

-

Parana Technologies

USA . 1,144 parts In-Stock

1+ parts

-

100+ parts

$1.738

1k+ parts

-

10k+ parts

-

1,144

-

$1.738

-

-

Kepictronics

USA . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

150

-

-

-

-

Overview

Elevate your designs with the ST1802FX from STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance NPN power transistor excels in switching applications, ensuring reliable operation under demanding conditions. With superior thermal management and robust voltage handling, it empowers engineers to push boundaries while enhancing efficiency. Choose STMicroelectronics for unparalleled quality and performance—your projects deserve nothing less!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliable performance and protection against environmental factors, making it suitable for various applications.

Polarity: NPN

The NPN configuration allows for efficient switching operations, particularly in high-speed applications.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, saving space and reducing complexity.

Transistor Application: SWITCHING

Optimized for switching applications, this BJT can handle high-speed operations, making it ideal for power management.

Package Shape: RECTANGULAR

The rectangular shape provides efficient thermal dissipation and aids in compact circuit design.

Terminal Form: THROUGH-HOLE

Through-hole mounting ensures strong mechanical connections and ease of soldering, enhancing the reliability of the assembly.

Number of Terminals: 3

With 3 terminals, it allows for versatile circuit configurations, making it adaptable to various design needs.

Maximum Power Dissipation: 60 W

A high power dissipation capability allows the transistor to handle significant power without overheating, which is crucial for reliability.

Package Style (Meter): FLANGE MOUNT

Flange mounting enables secure installation, providing stability in operation and reducing the risk of mechanical failure.

Minimum DC Current Gain (hFE): 4

A minimum hFE of 4 enables effective amplification, making the transistor suitable for a range of amplification applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, it can function in demanding environments, ensuring longevity and reliability.

Maximum Collector-Emitter Voltage: 600 V

A high voltage rating allows the transistor to be used in various high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon as the base material provides excellent performance characteristics, including good thermal stability and high efficiency.

Maximum Collector Current (IC): 10 A

A maximum collector current of 10 A supports higher load applications, making it suitable for power-intensive tasks.

Terminal Finish: MATTE TIN

Matte tin finish offers excellent solderability and corrosion resistance, contributing to the overall durability of the connection.

Terminal Position: SINGLE

Single terminal position simplifies design integration, making the product easy to use and install in a variety of circuits.

Case Connection: ISOLATED

An isolated case connection improves safety and prevents interference with other circuit components, enhancing overall system reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST1802FX attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Minimum DC Current Gain (hFE):

4

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST1802FX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4