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STH13009

STMicroelectronics

STH13009 by STMicroelectronics

STH13009 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,079 parts In-Stock

1+ parts

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7,079

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Digiode

USA . 2,828 parts In-Stock

1+ parts

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2,828

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Anansix

USA . 1,501 parts In-Stock

1+ parts

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1,501

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 287 parts In-Stock

1+ parts

$1.499

100+ parts

-

1k+ parts

$1.349

10k+ parts

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287

$1.499

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$1.349

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MKK Technologies

India . 516 parts In-Stock

1+ parts

$2.818

100+ parts

-

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516

$2.818

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DigiPath Technology Company

USA . 516 parts In-Stock

1+ parts

$2.818

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516

$2.818

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AZTECH Wire

Italy . 786 parts In-Stock

1+ parts

$20.040

100+ parts

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786

$20.040

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Alle Elektronik GmbH

Germany . 6,090 parts In-Stock

1+ parts

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6,090

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Corphita

USA . 4,355 parts In-Stock

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4,355

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Parana Technologies

USA . 1,181 parts In-Stock

1+ parts

-

100+ parts

$1.792

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1,181

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$1.792

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Overview

Unlock unparalleled performance with the STH13009 from STMicroelectronics—a trusted leader in innovative semiconductor solutions. This robust NPN transistor is engineered for high-efficiency switching applications, ensuring reliability and consistency even at extreme temperatures. With a compact design and easy integration, it empowers your projects to operate smoothly while saving energy. Experience the quality that drives innovation and elevate your designs to new heights with STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent insulation and durability, making it suitable for various environments.

Polarity or Channel Type: NPN

As an NPN transistor, this product is ideal for providing high-speed switching capabilities, making it perfect for digital applications.

Configuration: SINGLE

A single configuration allows for simplicity in design and integration into circuits, reducing complexity while ensuring reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT can handle rapid on/off states, making it perfect for power control.

Package Shape: RECTANGULAR

The rectangular shape facilitates convenient mounting and space-efficient integration into printed circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and reliable electrical connections, advantageous for high-power applications.

No. of Terminals: 3

With three terminals, this BJT can effectively manage input, output, and control signals, ensuring versatile circuit applications.

Maximum Power Dissipation (Abs): 100 W

A high maximum power dissipation rating allows this transistor to handle significant amounts of power without overheating, ensuring stability in demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style aids in secure attachment and effective thermal management, enhancing performance in high-current situations.

Minimum DC Current Gain (hFE): 11

A minimum DC current gain of 11 indicates this transistor's ability to amplify current effectively, suitable for various amplification tasks.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can function reliably in high-temperature environments.

Maximum Collector-Emitter Voltage: 400 V

The high collector-emitter voltage rating makes this BJT suitable for applications requiring high voltage operations, enhancing versatility.

Transistor Element Material: SILICON

Being made from silicon, it ensures efficient electrical properties and performance, a standard choice for most modern electronic applications.

Maximum Collector Current (IC): 12 A

A maximum collector current of 12 A allows this transistor to handle significant load currents, ideal for demanding power applications.

Terminal Position: SINGLE

Single terminal position simplifies layout design in PCB manufacturing, reducing assembly complexity and cost.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STH13009 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

11

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STH13009 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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