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STH16006A

Semiconductor Technology

STH16006A by Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 8 A; No. of Elements: 1;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Bipolar Junction Transistors (BJT) STH16006A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Semiconductor Technology

Specs

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

STH16006A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semiconductor Technology

Since its initial founding in 1968, Semiconductor Technology, Inc. has assumed a leading role in high voltage N-Channel Mosfet and high voltage NPN/PNP Bipolar Transistor technology. We endeavor to offer our customers the most reliable mosfets and transistors in the industry. Transistors, being the building blocks of modern electronics, are found in just about any electrical product made to date. Our products serve a wide range of commercial, industrial, telecommunications, and military OEM's both in the domestic and international markets. Our quality assurance procedures and a zero-defects program have been in force for over 30 years. We can process our products to environmental and burn-in screening Class I, II, and III, which meet military environmental requirements; The product line encompasses the many NPN/PNP dual transistors (dual differential transistors) line. Approximately thirty-five percent of our high voltage N-Channel mosfets and high voltage NPN/PNP transistors are sole source items.

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