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STN715

STMicroelectronics

STN715 by STMicroelectronics

STN715 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages of 80V. Ideal for compact electronic designs with its surface mount configuration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,164 parts In-Stock

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6,164

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Anansix

USA . 1,958 parts In-Stock

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1,958

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Digiode

USA . 1,248 parts In-Stock

1+ parts

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1,248

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ComSIT Distribution GmbH

Germany . 395 parts In-Stock

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395

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Martec Srl

Italy . 360 parts In-Stock

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360

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,550 parts In-Stock

1+ parts

$1.292

100+ parts

-

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$1.163

10k+ parts

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1,550

$1.292

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$1.163

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MKK Technologies

India . 799 parts In-Stock

1+ parts

$2.429

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799

$2.429

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DigiPath Technology Company

USA . 799 parts In-Stock

1+ parts

$2.429

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799

$2.429

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AZTECH Wire

Italy . 1,214 parts In-Stock

1+ parts

$14.320

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1,214

$14.320

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Kepictronics

USA . 20,000 parts In-Stock

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20,000

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Perfect Parts

USA . 10,200 parts In-Stock

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10,200

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A-Z Elektronik GmbH

Germany . 7,332 parts In-Stock

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7,332

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Parana Technologies

USA . 2,359 parts In-Stock

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$1.544

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2,359

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$1.544

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Corphita

USA . 2,164 parts In-Stock

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2,164

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Overview

Unlock the potential of your designs with the STN715 from STMicroelectronics! This high-quality NPN power transistor is engineered for exceptional switching performance, making it ideal for a variety of applications in consumer electronics and industrial control. Backed by STMicroelectronics' renowned expertise and commitment to innovation, the STN715 ensures reliability and efficiency, empowering you to create robust solutions that stand the test of time. Experience superior quality and performance—choose the STN715 for your next project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package material ensures durability and good protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

Being an NPN transistor, it has high electron mobility, which allows for faster switching speeds and makes it ideal for many electronic applications.

Configuration: SINGLE

The single configuration keeps the design simple and compact, which is advantageous for space-constrained applications.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can efficiently control power flow, making it perfect for power management circuits.

Surface Mount: YES

Surface mount compatibility allows for easier integration into modern PCB designs, contributing to lower production costs and improved assembly efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on the PCB, facilitating better layout and routing.

Terminal Form: GULL WING

Gull wing terminal design offers strong mechanical support and easier soldering, ensuring reliable connections in the assembly process.

No. of Terminals: 4

With four terminals, this transistor supports full functionality while maintaining a compact footprint, essential for dense circuit designs.

Maximum Power Dissipation (Abs): 1.6 W

A maximum power dissipation of 1.6 W allows this transistor to handle significant power without overheating, enhancing reliability in high-load applications.

Package Style (Meter): SMALL OUTLINE

Small outline packages save valuable board space while providing adequate performance, making them suitable for compact device designs.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures efficient amplification of input signals, making it effective for various signal processing applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows for use in high-temperature environments, broadening the application spectrum.

Maximum Collector-Emitter Voltage: 80 V

An 80 V collector-emitter voltage rating enables handling of higher voltage applications, enhancing versatility in power electronics.

Transistor Element Material: SILICON

Silicon as the element material ensures high performance and reliability in various electronic applications due to its favorable electrical properties.

Maximum Collector Current (IC): 1.5 A

1.5 A collector current handling capability supports robust performance in demanding applications, providing reliability and efficiency.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin terminal finish improves solderability and reduces the risk of whisker formation, enhancing overall reliability during assembly.

Terminal Position: DUAL

Dual terminal positioning improves layout flexibility, making it easier to design and integrate into complex circuits.

Case Connection: COLLECTOR

With a collector case connection, it simplifies thermal management and contributes to efficient heat dissipation, ensuring reliable operation.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds aligns with standard soldering processes, ensuring compatibility with common PCB manufacturing practices.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C ensures the component can withstand high-temperature soldering processes without damage.

Nominal Transition Frequency (fT): 50 MHz

A nominal transition frequency of 50 MHz allows for high-speed switching applications, making this transistor suitable for RF and fast-switching circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STN715 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STN715 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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