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STN724

STMicroelectronics

STN724 by STMicroelectronics

STN724 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, supports up to 3A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,004 parts In-Stock

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5,004

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Bristol Electronics

USA . 2,002 parts In-Stock

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2,002

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Atlantic Semiconductor

USA . 2,002 parts In-Stock

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2,002

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Pegasus Components GmbH

Germany . 2,000 parts In-Stock

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2,000

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Anansix

USA . 725 parts In-Stock

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725

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Digiode

USA . 713 parts In-Stock

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713

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Dan-Mar Components

USA . 116 parts In-Stock

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116

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 753 parts In-Stock

1+ parts

$0.879

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$0.791

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753

$0.879

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$0.791

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MKK Technologies

India . 2,300 parts In-Stock

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$1.652

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$1.652

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DigiPath Technology Company

USA . 2,300 parts In-Stock

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$1.652

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$1.652

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$2.269

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$2.065

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$1.861

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1,000

$2.269

$2.065

$1.861

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AZTECH Wire

Italy . 768 parts In-Stock

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$16.250

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768

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Component Stockers USA

USA . 675 parts In-Stock

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$99.990

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675

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Kepictronics

USA . 20,000 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,375 parts In-Stock

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Corphita

USA . 4,326 parts In-Stock

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4,326

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Parana Technologies

USA . 2,192 parts In-Stock

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$1.050

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$1.050

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Perfect Parts

USA . 1,217 parts In-Stock

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Overview

Elevate your electronic designs with the STN724 from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This NPN power bipolar junction transistor excels in switching applications, delivering reliable performance and efficiency in a compact package. With its robust construction and high thermal stability, it ensures longevity even in demanding environments. Choose STMicroelectronics for quality you can depend on and unlock new possibilities in your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances the durability and thermal stability of the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching and amplification applications, providing versatility in circuit designs.

Configuration: SINGLE

A single configuration makes this transistor compact, facilitating easier integration into circuit designs.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current in electronic circuits.

Surface Mount: YES

Surface mount technology allows for more efficient use of PCB space and improves production efficiency.

Package Shape: RECTANGULAR

The rectangular shape is optimized for layout efficiency and heat dissipation in circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering characteristics, ensuring reliable electrical connections.

No. of Terminals: 4

Having four terminals allows for versatile configuration options in circuit designs.

Maximum Power Dissipation (Abs): 1.6 W

With a maximum power dissipation of 1.6 W, this transistor can handle a decent amount of power without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style optimizes space on PCBs, perfect for modern compact electronic devices.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 provides ample amplification for many electronic applications, enhancing performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance even in challenging thermal environments.

Maximum Collector-Emitter Voltage: 30 V

With a maximum Collector-Emitter voltage of 30 V, this transistor can be used effectively in various voltage scenarios.

Transistor Element Material: SILICON

Silicon as the material provides excellent electronic properties, ensuring efficient operation in signals and power handling.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A allows for robust performance in high current applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish enhances corrosion resistance, ensuring the longevity and reliability of solder joints.

Terminal Position: DUAL

Dual terminal positions enable flexible design options and facilitate better connection in various layouts.

Case Connection: COLLECTOR

The collector case connection ensures effective heat dissipation and optimized performance in power applications.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds ensures compatibility with modern surface mount soldering processes.

Peak Reflow Temperature (°C): 260

Peak reflow temperature of 260 °C ensures reliability during manufacturing and is compatible with lead-free soldering processes.

Nominal Transition Frequency (fT): 100 MHz

A transition frequency of 100 MHz allows for high-speed operation, making it suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STN724 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STN724 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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