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STN749

STMicroelectronics

STN749 by STMicroelectronics

STN749 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and collector current of 3 A. It operates up to 150 °C with a collector-emitter voltage of 25 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,106 parts In-Stock

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3,106

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Vyrian

USA . 2,703 parts In-Stock

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2,703

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Anansix

USA . 1,992 parts In-Stock

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1,992

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 372 parts In-Stock

1+ parts

$0.818

100+ parts

-

1k+ parts

$0.736

10k+ parts

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372

$0.818

-

$0.736

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MKK Technologies

India . 1,661 parts In-Stock

1+ parts

$1.538

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1,661

$1.538

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DigiPath Technology Company

USA . 1,661 parts In-Stock

1+ parts

$1.538

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1,661

$1.538

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AZTECH Wire

Italy . 1,067 parts In-Stock

1+ parts

$14.180

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1,067

$14.180

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Kepictronics

USA . 20,000 parts In-Stock

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20,000

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Corphita

USA . 4,505 parts In-Stock

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4,505

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Parana Technologies

USA . 276 parts In-Stock

1+ parts

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$0.978

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276

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$0.978

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Overview

Unlock the power of reliable performance with the STN749 from STMicroelectronics, a trusted name in cutting-edge technology. This PNP power BJT excels in switching applications, delivering durability and efficiency in compact designs. With its robust construction and exceptional thermal management, it’s perfect for diverse applications ranging from automotive to industrial systems. Elevate your projects with the quality and innovation that only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes this transistor lightweight and cost-effective, while providing adequate protection against environmental factors.

Polarity or Channel Type: PNP

As a PNP transistor, it is suitable for applications where the switching of high-side loads is required, making it ideal for various switching circuits.

Configuration: SINGLE

A single transistor design simplifies the circuit layout and reduces space requirements, making it ideal for compact applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT excels at efficiently controlling power flow in various electronic circuits.

Surface Mount: YES

Being surface mount enables easy integration into modern circuit boards, promoting high-density designs and automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on printed circuit boards and allows for easier placement and soldering.

Terminal Form: GULL WING

Gull wing terminals provide excellent solder joint reliability and are well-suited for automated assembly processes.

No. of Terminals: 4

Having four terminals allows for more versatile circuit designs and connections, improving circuit functionality.

Maximum Power Dissipation (Abs): 1.6 W

The high power dissipation capability means this transistor can handle stronger signals, making it suitable for various applications without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained applications, providing a compact footprint without sacrificing performance.

Minimum DC Current Gain (hFE): 15

With a minimum gain of 15, this BJT provides sufficient amplification for a wide range of switching applications.

Maximum Operating Temperature: 150 °C

The high operating temperature rating ensures reliability and performance even under harsh conditions, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 25 V

This voltage rating allows the transistor to be used in a variety of applications without risk of breakdown, making it versatile.

Transistor Element Material: SILICON

Silicon transistors are known for their stability and efficiency, providing reliable performance in electronic circuits.

Maximum Collector Current (IC): 3 A

The capability to handle up to 3 A of collector current enables the transistor to drive larger loads effectively.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish enhances solderability and minimizes oxidation, improving product longevity and reliability.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options in various circuit configurations, adding to its versatility.

Case Connection: COLLECTOR

Direct collector connection simplifies circuit design and reduces parasitic capacitance, resulting in improved performance.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow duration of 30 seconds, the product is robust against soldering processes, ensuring durability.

Peak Reflow Temperature °C: 260

A peak temperature of 260 °C allows for compatibility with modern soldering techniques, enhancing assembly convenience.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STN749 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STN749 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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