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MD1803DFP

STMicroelectronics

MD1803DFP by STMicroelectronics

MD1803DFP from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 10,419 parts In-Stock

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10,419

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Digiode

USA . 3,702 parts In-Stock

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3,702

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Anansix

USA . 909 parts In-Stock

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909

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IDEA Electronic Components Group

UK . 1,536 parts In-Stock

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$1.172

100+ parts

-

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$1.055

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1,536

$1.172

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$1.055

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MKK Technologies

India . 2,365 parts In-Stock

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$2.204

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2,365

$2.204

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DigiPath Technology Company

USA . 2,365 parts In-Stock

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$2.204

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2,365

$2.204

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AZTECH Wire

Italy . 128 parts In-Stock

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$17.750

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128

$17.750

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 8,458 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,597 parts In-Stock

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4,597

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Corphita

USA . 3,645 parts In-Stock

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3,645

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Perfect Parts

USA . 1,514 parts In-Stock

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1,514

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Parana Technologies

USA . 1,502 parts In-Stock

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$1.401

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$1.401

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Kepictronics

USA . 150 parts In-Stock

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150

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Overview

Unlock a new realm of power management with the MD1803DFP from STMicroelectronics, renowned for its commitment to quality and innovation. This NPN bipolar junction transistor excels in switching applications, delivering exceptional performance and reliability, even in demanding environments. With its robust design and built-in diode, you're assured of enhanced efficiency and durability, making it the ideal choice for everything from industrial automation to consumer electronics. Experience the difference that superior engineering brings to your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching applications, offering good performance and reliability in circuits.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

This configuration simplifies circuit design by integrating essential components, leading to reduced assembly time and improved efficiency.

Transistor Application: SWITCHING

Designed for switching applications, this transistor ensures fast and efficient operation in control and power management systems.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on circuit boards, facilitating easier integration into designs.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides excellent mechanical strength and electrical connectivity, making it suitable for high-power applications.

No. of Terminals: 3

With three terminals, it allows for a straightforward connection setup while enabling versatile circuit configurations.

Maximum Power Dissipation (Abs): 40 W

A maximum power dissipation of 40W ensures that the transistor can handle significant power levels without overheating, adding to its reliability.

Package Style (Meter): FLANGE MOUNT

Flange mounting enhances the stability and safety of the installation, making it a solid choice for various industrial applications.

Minimum DC Current Gain (hFE): 5.5

A minimum current gain of 5.5 indicates good amplifying capability, which is essential for efficient circuit design and operation.

Maximum Operating Temperature: 150 °C

The ability to operate at temperatures up to 150 °C makes this transistor suitable for high-temperature environments, ensuring consistent performance.

Maximum Collector-Emitter Voltage: 700 V

A high maximum collector-emitter voltage of 700V enables this transistor to be used in high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon is a well-established semiconductor material, providing reliable performance and longevity under various electrical conditions.

Maximum Collector Current (IC): 10 A

With a maximum collector current capability of 10A, this transistor is suitable for robust applications requiring significant power handling.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and corrosion resistance, ensuring long-term reliability in electrical connections.

Terminal Position: SINGLE

A single terminal position simplifies the wiring process, making installation straightforward and efficient.

Case Connection: ISOLATED

Isolated case connection ensures safety and prevents short circuits, making this transistor a secure component in sensitive applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MD1803DFP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

700 V

Minimum DC Current Gain (hFE):

5.5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MD1803DFP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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