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MD1802FH

STMicroelectronics

MD1802FH by STMicroelectronics

STMicroelectronics' MD1802FH is a NPN BJT transistor with 700V VCE, 10A IC, and 40W power dissipation. Ideal for switching applications, it has a min hFE of 5.5 and operates up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals in FLANGE MOUNT style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,851 parts In-Stock

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2,851

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Vyrian

USA . 2,259 parts In-Stock

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2,259

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Digiode

USA . 1,136 parts In-Stock

1+ parts

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1,136

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,546 parts In-Stock

1+ parts

$0.524

100+ parts

-

1k+ parts

$0.472

10k+ parts

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1,546

$0.524

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$0.472

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MKK Technologies

India . 752 parts In-Stock

1+ parts

$0.986

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752

$0.986

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DigiPath Technology Company

USA . 752 parts In-Stock

1+ parts

$0.986

100+ parts

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752

$0.986

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Corphita

USA . 4,396 parts In-Stock

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4,396

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Parana Technologies

USA . 1,869 parts In-Stock

1+ parts

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100+ parts

$0.627

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1,869

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$0.627

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Overview

Experience the superior performance and reliability of the MD1802FH by STMicroelectronics, a leading manufacturer in the industry. This power bipolar junction transistor (BJT) in NPN configuration is ideal for switching applications, offering a maximum collector current of 10A and a maximum collector-emitter voltage of 700V. With a package style of flange mount and through-hole terminals, this transistor is designed for easy installation and efficient operation. Trust STMicroelectronics to deliver quality components that meet your needs for power management and control. Upgrade your electronic systems with the MD1802FH and enjoy enhanced functionality and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors typically have higher electron mobility and faster switching speeds, making them ideal for high-frequency applications.

Configuration: SINGLE

Simplified design and ease of use for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching operations, making it efficient and reliable for controlling electrical currents.

Package Shape: RECTANGULAR

Compact and space-saving design, ideal for applications where size constraints are a concern.

Terminal Form: THROUGH-HOLE

Allows for easy installation and soldering onto a circuit board, providing secure connections.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capacity allows the transistor to handle large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Easily mountable on a flat surface, providing stability and convenience for installation.

Minimum DC Current Gain (hFE): 5.5

Ensures a minimum level of current gain, allowing for proper amplification and control of current flow.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without performance degradation, making it suitable for various industrial environments.

Maximum Collector-Emitter Voltage: 700 V

Can handle high voltage levels, making it suitable for applications that require voltage regulation and control.

Transistor Element Material: SILICON

Silicon material provides high performance, reliability, and efficiency for the transistor's operation.

Maximum Collector Current (IC): 10 A

Capable of handling high current levels, making it suitable for applications with high power requirements.

Terminal Finish: TIN

Tin finish ensures good solderability and corrosion resistance, enhancing the longevity of the transistor.

Terminal Position: SINGLE

Simplified connection for ease of installation and circuit integration.

Case Connection: ISOLATED

Provides electrical isolation between the transistor case and circuit board, preventing electrical interference and enhancing safety.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MD1802FH attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

700 V

Configuration:

Minimum DC Current Gain (hFE):

5.5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MD1802FH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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