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MD1803DFH

STMicroelectronics

MD1803DFH by STMicroelectronics

MD1803DFH by STMicroelectronics is a powerful NPN BJT designed for amplification applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for robust electronic circuits with through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Anansix

USA . 2,493 parts In-Stock

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Digiode

USA . 1,977 parts In-Stock

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Vyrian

USA . 1,717 parts In-Stock

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Lantek

USA . 1,000 parts In-Stock

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Q Components

USA . 3 parts In-Stock

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IDEA Electronic Components Group

UK . 1,701 parts In-Stock

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$0.466

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$0.419

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1,701

$0.466

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$0.419

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MKK Technologies

India . 880 parts In-Stock

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$0.875

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880

$0.875

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DigiPath Technology Company

USA . 880 parts In-Stock

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$0.875

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880

$0.875

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Authorized Procurement Solutions

USA . 5,400 parts In-Stock

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Corphita

USA . 4,281 parts In-Stock

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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Parana Technologies

USA . 978 parts In-Stock

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$0.557

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Kepictronics

USA . 92 parts In-Stock

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Overview

Elevate your projects with the MD1803DFH from STMicroelectronics—a trusted leader in semiconductor innovation. This versatile NPN power BJT delivers remarkable efficiency and reliability, making it ideal for demanding amplifier applications. With its robust design and built-in diode and resistor, this transistor ensures optimal performance under high power conditions. Experience unmatched quality and peace of mind, knowing you’re backed by ST's commitment to excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental stresses, making it suitable for reliable performance in various applications.

Polarity or Channel Type: NPN

NPN configuration is widely used in switching and amplification applications, providing versatility and compatibility with various circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

This configuration simplifies circuit design by incorporating additional components, reducing the need for external components and enhancing reliability.

Transistor Application: AMPLIFIER

Designed for amplification, this BJT is ideal for audio and signal processing applications, ensuring high performance in communication and electronics.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on circuit boards, facilitating compact and efficient designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure mounting and stability in design, making it suitable for applications requiring robust connections.

No. of Terminals: 3

Having three terminals allows for versatile configurations in circuit designs, providing options for enhanced functionality.

Maximum Power Dissipation (Abs): 40 W

With a maximum power dissipation of 40 W, this transistor can handle significant power loads, making it suitable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides easy mounting and thermal management, ensuring effective heat dissipation during operation.

Minimum DC Current Gain (hFE): 5.5

A minimum current gain of 5.5 indicates good amplification performance, making it suitable for driving loads in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can function reliably in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 700 V

The high voltage rating of 700 V allows this BJT to be used in high-voltage applications, providing versatility in circuit designs.

Transistor Element Material: SILICON

Silicon material ensures excellent electrical properties and thermal stability, contributing to the overall performance and reliability of the transistor.

Maximum Collector Current (IC): 10 A

Able to handle a maximum collector current of 10 A, this transistor is suitable for demanding applications that require high current handling.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, enhancing the longevity and reliability of electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies the integration of the transistor into circuits, making it easier to design and implement.

Case Connection: ISOLATED

The isolated case connection minimizes the risk of unwanted interactions with other components, ensuring a reliable and stable operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MD1803DFH attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

700 V

Minimum DC Current Gain (hFE):

5.5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MD1803DFH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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