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MD1803DFX

STMicroelectronics

MD1803DFX by STMicroelectronics

MD1803DFX by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 57W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

Median Price

$1.113

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 100 parts In-Stock

1+ parts

$1.185

100+ parts

$1.043

1k+ parts

$0.998

10k+ parts

-

100

$1.185

$1.043

$0.998

-

EBV Elektronik

Germany . 270 parts In-Stock

1+ parts

-

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-

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270

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Verical

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$1.041

1k+ parts

$0.997

10k+ parts

-

100

-

$1.041

$0.997

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 12,280 parts In-Stock

1+ parts

-

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12,280

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J2 Sourcing AB

Sweden . 10,800 parts In-Stock

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10,800

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Sensible Micro Corp

USA . 10,346 parts In-Stock

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10,346

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Digiode

USA . 3,160 parts In-Stock

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3,160

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Anansix

USA . 2,800 parts In-Stock

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2,800

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Chip Stock

USA . 2,529 parts In-Stock

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2,529

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Cogito LLC

Ukraine . 600 parts In-Stock

1+ parts

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600

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TME

Poland . 100 parts In-Stock

1+ parts

-

100+ parts

$1.330

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-

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100

-

$1.330

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.876

100+ parts

$0.797

1k+ parts

$0.718

10k+ parts

-

2,500

$0.876

$0.797

$0.718

-

IDEA Electronic Components Group

UK . 552 parts In-Stock

1+ parts

$1.025

100+ parts

-

1k+ parts

$0.922

10k+ parts

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552

$1.025

-

$0.922

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MKK Technologies

India . 2,239 parts In-Stock

1+ parts

$1.927

100+ parts

-

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2,239

$1.927

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DigiPath Technology Company

USA . 2,239 parts In-Stock

1+ parts

$1.927

100+ parts

-

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2,239

$1.927

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AZTECH Wire

Italy . 708 parts In-Stock

1+ parts

$9.010

100+ parts

-

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708

$9.010

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Component Stockers USA

USA . 505 parts In-Stock

1+ parts

$99.990

100+ parts

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505

$99.990

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RC Electronics

USA . 91,812 parts In-Stock

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91,812

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Epart123

USA . 30,000 parts In-Stock

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$0.560

10k+ parts

$0.560

30,000

-

-

$0.560

$0.560

GreenTree Electronics

Israel . 30,000 parts In-Stock

1+ parts

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30,000

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Infinite Electronics LLP (Excess)

. 10,803 parts In-Stock

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10,803

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A-Z Elektronik GmbH

Germany . 5,928 parts In-Stock

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5,928

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Formix International (Excess)

India . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,256 parts In-Stock

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4,256

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Corphita

USA . 3,844 parts In-Stock

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3,844

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Kepictronics

USA . 1,060 parts In-Stock

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Parana Technologies

USA . 578 parts In-Stock

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$1.225

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578

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$1.225

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Perfect Parts

USA . 381 parts In-Stock

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381

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Assy Fe

Spain . 64 parts In-Stock

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64

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Overview

Elevate your projects with the MD1803DFX from STMicroelectronics, a trusted leader in innovation. This powerful NPN transistor excels in amplifier applications, delivering reliability and efficiency for your electronic designs. With its robust build and impressive power handling, the MD1803DFX is perfect for high-performance needs, ensuring maximum value for your investment. Choose quality and performance that stands the test of time—experience the STMicroelectronics advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures longevity and reliability of the transistor in various applications.

Polarity or Channel Type: NPN

NPN configuration offers high speed and excellent amplification capabilities, making it suitable for amplifier applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides added protection and enhances the versatility of the transistor in various circuit designs.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in audio and signal processing applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of circuit board space, facilitating easier integration into designs.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust connections and stability, making it ideal for high-power applications.

No. of Terminals: 3

Three terminals simplify circuit design while providing adequate control over the transistor's functions.

Maximum Power Dissipation (Abs): 57 W

With a high power dissipation capability, this transistor can handle significant power loads without overheating, ensuring reliable performance.

Package Style (Meter): FLANGE MOUNT

Flange mount design allows for secure installation and enhanced thermal management, improving overall device longevity.

Minimum DC Current Gain (hFE): 5

A minimum hFE of 5 ensures adequate amplification, suitable for various electronic applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to be used in demanding environments without risk of failure.

Maximum Collector-Emitter Voltage: 700 V

A high collector-emitter voltage rating makes this transistor suitable for high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and thermal stability, ensuring reliable performance.

Maximum Collector Current (IC): 10 A

The ability to handle up to 10 A of collector current makes this transistor ideal for high-power applications.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and implementation, making it easier for engineers to incorporate into systems.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents short circuits, making it a secure choice for critical applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MD1803DFX attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

700 V

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MD1803DFX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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