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STD1805-1

STMicroelectronics

STD1805-1 by STMicroelectronics

STD1805-1 from STMicroelectronics is a robust NPN BJT designed for switching applications, featuring a max power dissipation of 15W and collector current of 5A. It operates efficiently up to 150 °C with a collector-emitter voltage of 60V. Ideal for various electronic circuits, it ensures reliable performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,016 parts In-Stock

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5,016

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Digiode

USA . 4,383 parts In-Stock

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4,383

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Anansix

USA . 2,041 parts In-Stock

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2,041

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IDEA Electronic Components Group

UK . 850 parts In-Stock

1+ parts

$1.792

100+ parts

-

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$1.613

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850

$1.792

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$1.613

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MKK Technologies

India . 197 parts In-Stock

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$3.370

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197

$3.370

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DigiPath Technology Company

USA . 197 parts In-Stock

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$3.370

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197

$3.370

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AZTECH Wire

Italy . 571 parts In-Stock

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$14.960

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571

$14.960

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Kepictronics

USA . 20,000 parts In-Stock

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20,000

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A-Z Elektronik GmbH

Germany . 5,771 parts In-Stock

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Corphita

USA . 2,105 parts In-Stock

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2,105

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Parana Technologies

USA . 579 parts In-Stock

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$2.143

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579

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$2.143

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Overview

Elevate your designs with the STD1805-1 from STMicroelectronics, where quality meets innovation. Renowned for reliability, STMicroelectronics delivers superior performance in power bipolar junction transistors, perfect for diverse switching applications. With its robust construction and capable of handling up to 15W, this NPN transistor ensures efficiency in demanding environments. Choose the STD1805-1 for unmatched value, empowering your projects with longevity and operational excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy construction provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are versatile for switching and amplification, making them widely used in electronic circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces complexity, ideal for straightforward applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor efficiently handles on/off operations, enhancing performance in control circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into various PCB layouts, optimizing space and layout design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are easy to solder, ensuring reliable connections.

No. of Terminals: 3

A compact 3-terminal design minimizes space usage while providing essential functionality, ideal for space-constrained applications.

Maximum Power Dissipation (Abs): 15 W

With a maximum power dissipation of 15W, this transistor can handle substantial loads without overheating, ensuring reliability.

Package Style (Meter): IN-LINE

In-line package style aids in easy placement on PCBs and contributes to efficient use of space in circuit design.

Minimum DC Current Gain (hFE): 20

A minimum hFE of 20 indicates good amplification capabilities, making this transistor suitable for various signal processing tasks.

Maximum Operating Temperature: 150 °C

Able to operate at up to 150 °C, this transistor is robust and can be used in high-temperature environments, increasing its versatility.

Maximum Collector-Emitter Voltage: 60 V

A collector-emitter voltage rating of 60V allows for flexibility in circuit design and usage in various applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon is known for its excellent electronic properties and reliability, ensuring stable performance in diverse conditions.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle substantial loads, making it efficient for power applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish ensures good solderability and corrosion resistance, enhancing the lifespan and reliability of the connections.

Terminal Position: SINGLE

Single terminal position creates a simplified layout for easy integration into circuit designs, enhancing versatility.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum time of 30 seconds at peak reflow temperature ensures compatibility with standard soldering processes, simplifying assembly.

Peak Reflow Temperature °C: 260

Withstanding peak reflow temperatures of 260 °C makes it suitable for surface mount technology (SMT) and reliable soldering applications.

Nominal Transition Frequency (fT): 150 MHz

A transition frequency of 150 MHz indicates the transistor's capability for high-speed applications, suitable for RF and audio frequencies.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STD1805-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STD1805-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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