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STD1802-1

STMicroelectronics

STD1802-1 by STMicroelectronics

STD1802-1 from STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 15W, a collector-emitter voltage of 60V, and operates up to 150 °C. Ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,146 parts In-Stock

1+ parts

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4,146

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Anansix

USA . 2,650 parts In-Stock

1+ parts

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2,650

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Vyrian

USA . 1,677 parts In-Stock

1+ parts

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1,677

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,153 parts In-Stock

1+ parts

$0.520

100+ parts

-

1k+ parts

$0.468

10k+ parts

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1,153

$0.520

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$0.468

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MKK Technologies

India . 736 parts In-Stock

1+ parts

$0.977

100+ parts

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736

$0.977

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DigiPath Technology Company

USA . 736 parts In-Stock

1+ parts

$0.977

100+ parts

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736

$0.977

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Corphita

USA . 2,557 parts In-Stock

1+ parts

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2,557

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Parana Technologies

USA . 1,058 parts In-Stock

1+ parts

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100+ parts

$0.622

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10k+ parts

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1,058

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$0.622

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Overview

Elevate your projects with the STD1802-1 NPN Power Bipolar Junction Transistor from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers a reliable solution that excels in switching applications. With impressive power handling and a robust design, this transistor ensures optimal performance under demanding conditions, providing exceptional value for engineers seeking efficiency and durability in their electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the transistor reliable in various applications.

Polarity or Channel Type: NPN

NPN configuration is ideal for a wide range of switching applications, making this transistor versatile and efficient for various circuits.

Configuration: SINGLE

Single configuration simplifies circuit design, reducing the size and cost of the layout.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT provides fast response times, facilitating high-speed circuit operations.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, making it suitable for compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and enhanced solderability, ensuring a robust connection in the circuit.

No. of Terminals: 3

Having three terminals simplifies the circuit design while allowing for effective functionality in various configurations.

Maximum Power Dissipation (Abs): 15 W

A maximum power dissipation of 15 W allows for handling significant power without overheating, ensuring reliability in high-power applications.

Package Style (Meter): IN-LINE

The in-line package style facilitates easy integration into printed circuit boards, enhancing design flexibility.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 indicates good amplification capabilities, making this BJT effective for low-signal applications.

Maximum Operating Temperature: 150 °C

Rated for a maximum operating temperature of 150 °C, this transistor is suitable for high-temperature environments, ensuring reliability and performance.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60 V, this device can operate safely in medium to high voltage applications, enhancing design versatility.

Transistor Element Material: SILICON

Silicon provides excellent thermal and electronic properties, ensuring stable operation and efficient performance in electronic circuits.

Maximum Collector Current (IC): 3 A

Capable of handling a maximum collector current of 3 A, this BJT is suitable for applications requiring high current handling, such as motor control.

Terminal Finish: Matte Tin (Sn)

Matte tin finish enhances solderability and ensures reliable connections, contributing to the overall durability of the product.

Terminal Position: SINGLE

Single terminal position simplifies layout design, avoiding complications during assembly and ensuring ease of use.

Nominal Transition Frequency (fT): 150 MHz

A nominal transition frequency of 150 MHz indicates the ability to operate effectively at high frequencies, making it suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STD1802-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STD1802-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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