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STD13003-1

STMicroelectronics

STD13003-1 by STMicroelectronics

STD13003-1 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 20W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs with its compact through-hole package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,633 parts In-Stock

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4,633

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Digiode

USA . 4,471 parts In-Stock

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4,471

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Anansix

USA . 428 parts In-Stock

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428

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,969 parts In-Stock

1+ parts

$0.618

100+ parts

-

1k+ parts

$0.556

10k+ parts

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1,969

$0.618

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$0.556

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MKK Technologies

India . 1,394 parts In-Stock

1+ parts

$1.163

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1,394

$1.163

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DigiPath Technology Company

USA . 1,394 parts In-Stock

1+ parts

$1.163

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1,394

$1.163

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Kepictronics

USA . 33,902 parts In-Stock

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33,902

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Infinite Electronics LLP (Excess)

. 15,003 parts In-Stock

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15,003

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Corphita

USA . 4,619 parts In-Stock

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4,619

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Parana Technologies

USA . 1,227 parts In-Stock

1+ parts

-

100+ parts

$0.739

1k+ parts

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1,227

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$0.739

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Overview

Unlock unparalleled performance with the STD13003-1 from STMicroelectronics, a leader in semiconductor innovation. This robust NPN power transistor excels in switching applications, delivering reliability and efficiency for your projects. With its durable plastic/epoxy package and impressive thermal handling capabilities, it’s designed to meet the demands of modern electronics. Experience enhanced value and peace of mind knowing you’re backed by a trusted manufacturer committed to quality and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

As an NPN transistor, it provides excellent performance in switching applications and is compatible with various digital and analog circuits.

Configuration: SINGLE

A single configuration allows for straightforward integration into circuits, making it easier to design and implement.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor excels in efficiently controlling current flow in electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on PCBs, allowing for more efficient circuit design and layout.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and ease of handling during assembly, making it reliable for various applications.

No. of Terminals: 3

With three terminals, it allows for versatile configurations, supporting a wide range of circuit designs.

Maximum Power Dissipation (Abs): 20 W

A maximum power dissipation of 20 W indicates that the transistor can handle significant power loads, making it suitable for high-power applications.

Package Style (Meter): IN-LINE

The in-line package style is favored in many applications for its compact design, simplifying placement on circuit boards.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 ensures sufficient amplification, making it effective in signal processing applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor is capable of functioning in high-temperature environments, enhancing reliability.

Maximum Collector-Emitter Voltage: 400 V

A maximum collector-emitter voltage of 400 V means it can handle high voltage applications, providing flexibility in a variety of designs.

Transistor Element Material: SILICON

Silicon transistors are known for their excellent thermal stability and reliability, making them a go-to choice for electronic devices.

Maximum Collector Current (IC): 1.5 A

A maximum collector current of 1.5 A allows the transistor to drive higher current loads, suitable for a variety of power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures good solderability and resistance to corrosion, enhancing durability during assembly and in-use.

Terminal Position: SINGLE

A single terminal position simplifies the layout and design of circuit boards, making it user-friendly for engineers.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STD13003-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STD13003-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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