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STD13005IS

Kodenshi Auk

STD13005IS by Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

< 1k

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kepictronics

USA . 33,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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33,000

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Technical Specifications

Power Bipolar Junction Transistors (BJT) STD13005IS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Kodenshi Auk

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

STD13005IS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Kodenshi Auk

Optoelectronics of the KODENSHI Group, which has a history of more than 40 years, starting in Kyoto, Japan in 1972, and based in Iksan, Korea in 1980 and China in 1992, has established an optical sensor and semiconductor device business network based on 40 years of technical know-how. With compound semiconductor FAB and silicon FAB technology, we have grown with solid technology by providing total system solutions from chips to packages.

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